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參數(shù)資料
| 型號(hào)： | SI6966DQ |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | 小信號(hào)晶體管 |
| 英文描述： | Dual N-Channel 2.5V Specified PowerTrench MOSFET |
| 中文描述： | 5500 mA, 20 V, 2 CHANNEL, N-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| 封裝： | TSSOP-8 |
| 文件頁(yè)數(shù)： | 1/3頁(yè) |
| 文件大小： | 198K |
| 代理商： | SI6966DQ |
SPICE Device Model Si6966EDQ
Vishay Siliconix
This document is intended as a SPICE modeling guideline and does not constitute a commercial product data sheet. Designers should refer to the appropriate
data sheet of the same number for guaranteed specification limits.
Document Number: 70074
22-Oct-04
www.vishay.com
1
N-Channel 2.5-V (G-S) MOSFET, ESD Protected
CHARACTERISTICS
N-Channel Vertical DMOS
Macro Model (Subcircuit Model)
Level 3 MOS
Apply for both Linear and Switching Application
Accurate over the
55 to 125
°
C Temperature Range
Model the Gate Charge, Transient, and Diode Reverse Recovery
Characteristics
DESCRIPTION
The attached spice model describes the typical electrical
characteristics of the n-channel vertical DMOS. The subcircuit
model is extracted and optimized over the
55 to 125
°
C
temperature ranges under the pulsed 0 to 5V gate drive. The
saturated output impedance is best fit at the gate bias near the
threshold voltage.
A novel gate-to-drain feedback capacitance network is used to model
the gate charge characteristics while avoiding convergence difficulties
of the switched C
gd
model. All model parameter values are optimized
to provide a best fit to the measured electrical data and are not
intended as an exact physical interpretation of the device.
SUBCIRCUIT MODEL SCHEMATIC
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| SI6968BEDQ | Dual N-Channel 2.5-V (G-S) MOSFET Common Drain, ESD Protection |
| SI6968BEDQ-T1 | Dual N-Channel 2.5-V (G-S) MOSFET Common Drain, ESD Protection |
| SI6968ADQ | N-Channel 2.5-V (G-S) Battery Switch |
| SI6973DQ | Dual P-Channel 1.8-V (G-S) MOSFET |
| SI6975DQ | Dual P-Channel 12-V (D-S) MOSFET |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| SI6966DQ-T1 | 功能描述:MOSFET 20V 4.5A 1W RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| SI6966DQ-T1-E3 | 功能描述:MOSFET 20V 4.5A 1W RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| SI6966DQ-T1-E3/BKN | 制造商:Vishay Siliconix 功能描述:MOSFET; 20V, N-CH, 30MOHM, 32M CELL Trench |
| SI6966DQ-T1-GE3 | 功能描述:MOSFET 20V 4.5A 1.14W 30mohm @ 4.5V RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| SI6966EDQ | 制造商:Vishay Intertechnologies 功能描述:Dual N-channel MOSFET,SI6966EDQ 20V 4.5A |
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