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參數(shù)資料
| 型號： | SI6955 |
| 廠商： | Fairchild Semiconductor Corporation |
| 英文描述： | Dual 30V P-Channel PowerTrench MOSFET |
| 中文描述： | 雙30V的P溝道PowerTrench MOSFET的 |
| 文件頁數(shù)： | 2/5頁 |
| 文件大?。?/td> | 164K |
| 代理商： | SI6955 |
Si6955DQ Rev C(W)
Electrical Characteristics
T
A
= 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Min
Typ Max Units
Off Characteristics
BV
DSS
BV
DSS
T
J
I
DSS
I
GSSF
I
GSSR
Drain–Source Breakdown Voltage V
GS
= 0 V, I
D
= –250
μ
A
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current
Gate–Body Leakage, Forward
Gate–Body Leakage, Reverse
–30
V
I
D
= –250
μ
A, Referenced to 25
°
C
–22
mV/
°
C
V
DS
= –24 V,
V
GS
= –20 V,
V
GS
= 20 V,
V
GS
= 0 V
V
DS
= 0 V
V
DS
= 0 V
–1
–100
100
μ
A
nA
nA
On Characteristics
V
GS(th)
Gate Threshold Voltage
V
GS(th)
T
J
Temperature Coefficient
R
DS(on)
Static Drain–Source
On–Resistance
(Note 2)
V
DS
= V
GS
, I
D
= –250
μ
A
I
D
= –250
μ
A, Referenced to 25
°
C
–1
–1.9
4
–3
V
Gate Threshold Voltage
mV/
°
C
V
GS
= –10 V,
V
GS
= –4.5 V,
V
GS
= –10 V, I
D
= –2.5 A, T
J
=125
°
C
V
GS
= –10 V,
V
DS
= –5 V
I
D
= –2.5 A
I
D
= –1.8 A
64
101
96
85
190
128
m
I
D(on)
On–State Drain Current
–15
A
g
FS
Forward Transconductance
V
DS
= –10V,
I
D
= –2.5 A
6
S
Dynamic Characteristics
C
iss
Input Capacitance
C
oss
Output Capacitance
C
rss
Reverse Transfer Capacitance
298
83
39
pF
pF
pF
V
DS
= –10 V,
f = 1.0 MHz
V
GS
= 0 V,
Switching Characteristics
(Note 2)
t
d(on)
Turn–On Delay Time
t
r
Turn–On Rise Time
t
d(off)
Turn–Off Delay Time
t
f
Turn–Off Fall Time
Q
g
Total Gate Charge
Q
gs
Gate–Source Charge
Q
gd
Gate–Drain Charge
6
13
11
6
6
1
1.2
15
18
27
15
15
ns
ns
ns
ns
nC
nC
nC
V
DD
= –15 V,
V
GS
= –10 V,
I
D
= –1 A,
R
GEN
= 6
V
DS
= –10V,
V
GS
= –10 V
I
D
= –2.5 A,
Drain–Source Diode Characteristics and Maximum Ratings
I
S
Maximum Continuous Drain–Source Diode Forward Current
V
SD
Drain–Source Diode Forward
Voltage
–0.83
–1.2
A
V
V
GS
= 0 V,
I
S
= –0.83 A
(Note 2)
–0.8
Notes:
1.
R
θ
JA
is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of
the drain pins. R
θ
JC
is guaranteed by design while R
θ
CA
is determined by the user's board design.
a)
100°C/W when
mounted on a 1in
2
pad
of 2 oz copper for
single operation and
81°C/W for dual
operation.
b)
125°C/W when mounted
on a minimum pad of 2 oz
copper for single operation
and 104°C/W for dual
operation.
Scale 1 : 1 on letter size paper
2.
Pulse Test: Pulse Width < 300
μ
s, Duty Cycle < 2.0%
S
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