- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄382509 > SI6933DQ (FAIRCHILD SEMICONDUCTOR CORP) Dual 30V P-Channel PowerTrench MOSFET PDF資料下載
參數(shù)資料
| 型號： | SI6933DQ |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | 小信號晶體管 |
| 英文描述： | Dual 30V P-Channel PowerTrench MOSFET |
| 中文描述： | 3500 mA, 30 V, 2 CHANNEL, P-CHANNEL, Si, SMALL SIGNAL, MOSFET, MO-153AA |
| 封裝： | TSSOP-8 |
| 文件頁數(shù)： | 2/5頁 |
| 文件大小： | 83K |
| 代理商： | SI6933DQ |
Si6933DQ Rev. B (W)
Electrical Characteristics
T
A
= 25°C unless otherwise noted
Test Conditions
Symbol
Parameter
Min
Typ Max Units
Off Characteristics
BV
DSS
Drain–Source Breakdown Voltage V
GS
= 0 V,
BV
DSS
T
J
Coefficient
I
DSS
Zero Gate Voltage Drain Current
I
GSSF
Gate–Body Leakage, Forward
I
GSSR
Gate–Body Leakage, Reverse
I
D
= –250
μ
A
–30
V
Breakdown Voltage Temperature
I
D
= –250
μ
A, Referenced to 25
°
C
–22
mV/
°
C
V
DS
= –24 V,
V
GS
= –20 V,
V
GS
= 20 V,
V
GS
= 0 V
V
DS
= 0 V
V
DS
= 0 V
–1
–100
100
μ
A
nA
nA
On Characteristics
V
GS(th)
Gate Threshold Voltage
V
GS(th)
T
J
Temperature Coefficient
R
DS(on)
Static Drain–Source
On–Resistance
(Note 2)
V
DS
= V
GS
,
I
D
= –250
μ
A, Referenced to 25
°
C
I
D
= –250
μ
A
–1
–1.8
4.6
–3
V
Gate Threshold Voltage
mV/
°
C
V
GS
= –10 V,
V
GS
= –4.5 V,
V
GS
= –10 V, I
D
= –3.5 A, T
J
=125
°
C
V
GS
= –10 V,
V
DS
= –5 V
I
D
= –3.5 A
I
D
= –2.5 A
28
42
38
45
85
54
m
I
D(on)
On–State Drain Current
–15
A
g
FS
Forward Transconductance
V
DS
= –5 V,
I
D
= –3.5 A
12
S
Dynamic Characteristics
C
iss
Input Capacitance
C
oss
Output Capacitance
C
rss
Reverse Transfer Capacitance
854
215
112
pF
pF
pF
V
DS
= –15 V,
f = 1.0 MHz
V
GS
= 0 V,
Switching Characteristics
(Note 2)
t
d(on)
Turn–On Delay Time
t
r
Turn–On Rise Time
t
d(off)
Turn–Off Delay Time
t
f
Turn–Off Fall Time
Q
g
Total Gate Charge
Q
gs
Gate–Source Charge
Q
gd
Gate–Drain Charge
9
14
29
15
8
2.4
3
20
20
60
20
30
ns
ns
ns
ns
nC
nC
nC
V
DD
= –15 V,
V
GS
= –10 V,
I
D
= –1 A,
R
GEN
= 6
V
DS
= –15V,
V
GS
= –10 V
I
D
= –3.5 A,
Drain–Source Diode Characteristics and Maximum Ratings
I
S
Maximum Continuous Drain–Source Diode Forward Current
V
SD
Drain–Source Diode Forward
Voltage
–0.83
–1.2
A
V
V
GS
= 0 V,
I
S
= –0.83 A
(Note 2)
–0.7
Notes:
1.
R
is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of
the drain pins. R
θ
JC
is guaranteed by design while R
θ
CA
is determined by the user's board design.
a) R
θ
JA
is 100
°
C/W (steady state) when mounted on a 1 inch2 copper pad on FR-4.
b) R
θ
JA
is 125
°
C/W (steady state) when mounted on a minimum copper pad on FR-4.
2.
Pulse Test: Pulse Width < 300
μ
s, Duty Cycle < 2.0%
S
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| SI6943 | Dual P-Channel 2.5V Specified PowerTrench MOSFET |
| SI6943DQ | Dual P-Channel 2.5V Specified PowerTrench MOSFET |
| SI6953DQ | Dual 20V P-Channel PowerTrench MOSFET |
| SI6955 | Dual 30V P-Channel PowerTrench MOSFET |
| SI6955DQ | Dual 30V P-Channel PowerTrench MOSFET |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| SI6933DQ-T1 | 功能描述:MOSFET 30V 3.5A 1W RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| SI6933DQ-T1-E3 | 功能描述:MOSFET 30V 3.5A 1W RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| SI6933DQ-T1-E3/BKN | 制造商:Vishay Siliconix 功能描述:P-CHAN 30V TRENCH 32M CELL MOSFET D |
| SI6933DQ-T1-GE3 | 功能描述:MOSFET 30V 3.5A 1.0W 45mohm @ 10V RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| SI6943 | 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:Dual P-Channel 2.5V Specified PowerTrench MOSFET |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。