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參數(shù)資料
| 型號： | SI6928DQ |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | 小信號晶體管 |
| 英文描述： | Dual 30V N-Channel PowerTrench MOSFET |
| 中文描述： | 4000 mA, 30 V, 2 CHANNEL, N-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| 封裝： | TSSOP-8 |
| 文件頁數(shù)： | 2/5頁 |
| 文件大?。?/td> | 160K |
| 代理商： | SI6928DQ |
SI6928DQ Rev. B (W)
Electrical Characteristics
T
A
= 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Min
Typ Max Units
Off Characteristics
BV
DSS
Drain–Source Breakdown Voltage
BV
DSS
T
J
Coefficient
I
DSS
Zero Gate Voltage Drain Current
V
GS
= 0 V,
I
D
= 250
μ
A,Referenced to 25
°
C
V
DS
= 30 V,
V
GS
= 0 V
V
DS
= 30 V,V
GS
= 0 V,T
J
= 55
°
C
V
GS
= 20 V,
V
DS
V
GS
= –20 V
V
DS
= 0 V
I
D
= 250
μ
A
30
V
Breakdown Voltage Temperature
20
mV/
°
C
μ
A
1
5
I
GSSF
I
GSSR
Gate–Body Leakage, Forward
Gate–Body Leakage, Reverse
100
–100
nA
nA
On Characteristics
V
GS(th)
Gate Threshold Voltage
V
GS(th)
T
J
Temperature Coefficient
R
DS(on)
Static Drain–Source
On–Resistance
(Note 2)
V
DS
= V
GS
,
I
D
= 250
μ
A,Referenced to 25
°
C
V
GS
= 10 V,
I
D
= 4.0 A
V
GS
= 4.5 V,
I
D
= 250
μ
A
1
1.6
3
V
Gate Threshold Voltage
–5
20
26
mV/
°
C
m
I
D
= 3.4 A
35
50
I
D(on)
On–State Drain Current
V
GS
= 10 V,
V
DS
= 5 V
20
A
g
FS
Forward Transconductance
V
DS
= 15 V,
I
D
= 4.0 A
26
S
Dynamic Characteristics
C
iss
Input Capacitance
C
oss
Output Capacitance
C
rss
Reverse Transfer Capacitance
830
183
78
pF
pF
pF
V
DS
= 15 V,
f = 1.0 MHz
V
GS
= 0 V,
Switching Characteristics
(Note 2)
t
d(on)
Turn–On Delay Time
t
r
Turn–On Rise Time
t
d(off)
Turn–Off Delay Time
t
f
Turn–Off Fall Time
t
rr
Q
g
Gate Charge
Q
gt
Total Gate Charge
Q
gs
Gate–Source Charge
Q
gd
Gate–Drain Charge
6
10
18
5
17
8
15
2.8
3
12
20
32
10
60
14
30
ns
ns
ns
ns
ns
nC
nC
nC
nC
V
DD
= 15 V,
V
GS
= 10 V,
I
D
= 1 A,
R
GEN
= 6
Reverse Recovery Time
V
GS
= 0 V,
dI
F
/dt = 100A/
μ
s
V
DS
= 15 V, V
GS
= 5 V, I
D
= 4.0 A
V
DS
= 15 V,
I
D
= 4.0 A,
V
GS
= 10 V
I
F
= 1.25 A,
Drain–Source Diode Characteristics and Maximum Ratings
I
S
Maximum Continuous Drain–Source Diode Forward Current
V
SD
Drain–Source Diode Forward
Voltage
1.25
1.2
A
V
V
GS
= 0 V,
I
S
= 1.25 A
(Note 2)
0.73
Notes:
1.
R
θ
JA
is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of
the drain pins. R
θ
is guaranteed by design while R
θ
CA
is determined by the user's board design.
a) R
θ
JA
is 100
°
C/W (steady state) when mounted on a 1 inch2 copper pad on FR-4.
b) R
θ
JA
is 125
°
C/W (steady state) when mounted on a minimum copper pad on FR-4.
2.
Pulse Test: Pulse Width < 300
μ
s, Duty Cycle < 2.0%
S
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| SI6928DQ-T1 | 功能描述:MOSFET 30V 4A 1W RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| SI6928DQ-T1-E3 | 功能描述:MOSFET 30V 4A 1W RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| SI6928DQ-T1-E3 | 制造商:Vishay Siliconix 功能描述:MOSFET |
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| SI692DQ | 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:Dual N-Channel 2.5V Specified PowerTrench MOSFET |
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