參數(shù)資料
型號： SI6426DQ
廠商： FAIRCHILD SEMICONDUCTOR CORP
元件分類： 小信號晶體管
英文描述： 30V N-Channel PowerTrench MOSFET
中文描述： 5400 mA, 20 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET
封裝： TSSOP-8
文件頁數(shù)： 2/5頁
文件大?。?/td> 164K
代理商： SI6426DQ
Si6426DQ Rev B(W)
Electrical Characteristics
T
A
= 25°C unless otherwise noted
Test Conditions
Symbol
Parameter
Min
Typ Max Units
Off Characteristics
BV
DSS
Drain–Source Breakdown Voltage
BV
DSS
T
J
Coefficient
I
DSS
Zero Gate Voltage Drain Current
I
GSSF
Gate–Body Leakage, Forward
I
GSSR
Gate–Body Leakage, Reverse
V
GS
= 0 V,
I
D
= 250
μ
A, Referenced to 25
°
C
V
DS
= 20 V,
V
GS
= 0 V
V
DS
= 20 V, V
GS
= 0 V, T
J
=55
°
C
V
GS
= 8 V,
V
DS
= 0 V
V
GS
= –8 V,
V
DS
= 0 V
I
D
= 250
μ
A
20
V
Breakdown Voltage Temperature
14
mV/
°
C
μ
A
nA
nA
1
5
100
–100
On Characteristics
V
GS(th)
Gate Threshold Voltage
V
GS(th)
T
J
Temperature Coefficient
R
DS(on)
Static Drain–Source
On–Resistance
(Note 2)
V
DS
= V
GS
,
I
D
= 250
μ
A, Referenced to 25
°
C
V
GS
= 4.5 V,
I
D
= 5.4 A
V
GS
= 2.5 V,
V
GS
= 4.5 V,
V
DS
= 5 V
V
GS
= 2.5 V,
V
DS
= 5 V
V
DS
= 10 V,
I
D
= 5.4 A
I
D
= 250
μ
A
0.6
0.9
–3
23
33
1.5
V
Gate Threshold Voltage
mV/
°
C
m
A
S
I
D
= 4.9 A
35
40
I
D(on)
g
FS
On–State Drain Current
Forward Transconductance
20
8
11
Dynamic Characteristics
C
iss
Input Capacitance
C
oss
Output Capacitance
C
rss
Reverse Transfer Capacitance
710
173
84
pF
pF
pF
V
DS
= 10 V,
f = 1.0 MHz
V
GS
= 0 V,
Switching Characteristics
(Note 2)
t
d(on)
Turn–On Delay Time
t
r
Turn–On Rise Time
t
d(off)
Turn–Off Delay Time
t
f
Turn–Off Fall Time
t
rr
Q
g
Total Gate Charge
Q
gs
Gate–Source Charge
Q
gd
Gate–Drain Charge
7
17
16
3
14
7
1.5
1.2
14
31
29
6
100
10
ns
ns
ns
ns
ns
nC
nC
nC
V
DD
= 6 V,
V
GS
= 4.5 V,
I
D
= 1 A,
R
GEN
= 6
Reverse Recovery Time
V
GS
= 0 V,
dI
F
/dt = 100A/
μ
s
V
DS
= 6 V,
V
GS
= 4.5 V
I
F
= 1.5 A,
I
D
= 5.4 A,
Drain–Source Diode Characteristics and Maximum Ratings
I
S
Maximum Continuous Drain–Source Diode Forward Current
Drain–Source Diode Forward
Voltage
1.25
A
V
SD
V
GS
= 0 V,
I
S
= 1.25 A
(Note 2)
0.7
1.2
V
Notes:
1.
R
θ
JA
is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of
the drain pins. R
θ
JC
is guaranteed by design while R
θ
CA
is determined by the user's board design.
a)
87°C/W when
mounted on a 1in
2
pad
of 2 oz copper.
b)
114°C/W when mounted
on a minimum pad of 2 oz
copper.
c)
Scale 1 : 1 on letter size
paper
2.
Pulse Test: Pulse Width < 300
μ
s, Duty Cycle < 2.0%
S
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