參數資料
型號： SI6410DQ
廠商： FAIRCHILD SEMICONDUCTOR CORP
元件分類： JFETs
英文描述： 30V N-Channel PowerTrench MOSFET
中文描述： 7.8 A, 30 V, 0.014 ohm, N-CHANNEL, Si, POWER, MOSFET
封裝： TSSOP-8
文件頁數： 2/5頁
文件大小： 162K
代理商： SI6410DQ
Si6410DQ Rev B(W)
Electrical Characteristics
T
A
= 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Min
Typ Max Units
Off Characteristics
BV
DSS
Drain–Source Breakdown Voltage
BV
DSS
T
J
Coefficient
I
DSS
Zero Gate Voltage Drain Current
I
GSSF
Gate–Body Leakage, Forward
I
GSSR
Gate–Body Leakage, Reverse
V
GS
= 0 V,
I
D
= 250
μ
A, Referenced to 25
°
C
V
DS
= 30 V,
V
GS
= 0 V
V
DS
= 30 V, V
GS
= 0 V, T
J
=
55
°
C
V
GS
= 20 V,
V
DS
= 0 V
V
GS
= –20 V,
V
DS
= 0 V
I
D
= 250
μ
A
30
V
Breakdown Voltage Temperature
22
mV/
°
C
μ
A
nA
nA
1
25
100
–100
On Characteristics
V
GS(th)
Gate Threshold Voltage
V
GS(th)
T
J
Temperature Coefficient
R
DS(on)
Static Drain–Source
On–Resistance
(Note 2)
V
DS
= V
GS
,
I
D
= 250
μ
A, Referenced to 25
°
C
V
GS
= 10 V,
I
D
= 7.8 A
V
GS
= 4.5 V,
I
D
= 6.3 A
V
GS
= 10 V,
V
DS
= 5 V
V
DS
= 15 V,
I
D
= 7.8 A
I
D
= 250
μ
A
1
1.6
–5
11
14
3
V
Gate Threshold Voltage
mV/
°
C
m
A
S
14
21
I
D(on)
g
FS
On–State Drain Current
Forward Transconductance
20
31
Dynamic Characteristics
C
iss
Input Capacitance
C
oss
Output Capacitance
C
rss
Reverse Transfer Capacitance
1586
330
120
pF
pF
pF
V
DS
= 15 V,
f = 1.0 MHz
V
GS
= 0 V,
Switching Characteristics
(Note 2)
t
d(on)
Turn–On Delay Time
t
r
Turn–On Rise Time
t
d(off)
Turn–Off Delay Time
t
f
Turn–Off Fall Time
t
rr
Q
g
Total Gate Charge
Q
g
Total Gate Charge
Q
gs
Gate–Source Charge
Q
gd
Gate–Drain Charge
9
8
30
11
24
14
28
4
5
18
16
48
20
80
20
39
ns
ns
ns
ns
ns
nC
nC
nC
nC
V
DD
= 15 V,
V
GS
= 10 V,
I
D
= 1 A,
R
GEN
= 6
Reverse Recovery Time
V
GS
= 0 V, I
F
= 1.5 A,
dI
F
/dt = 100A/
μ
s
V
DS
= 15 V, I
D
= 7.8 A, V
GS
= 5 V
V
DS
= 15 V,
I
D
= 7.8 A,
V
GS
= 10 V
Drain–Source Diode Characteristics and Maximum Ratings
I
S
Maximum Continuous Drain–Source Diode Forward Current
Drain–Source Diode Forward
Voltage
1.5
A
V
SD
V
GS
= 0 V,
I
S
= 1.5 A
(Note 2)
0.7
1.1
V
Notes:
1.
R
θ
JA
is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of
the drain pins. R
θ
JC
is guaranteed by design while R
θ
CA
is determined by the user's board design.
a)
87°C/W when
mounted on a 1in
2
pad
of 2 oz copper.
b)
114°C/W when mounted
on a minimum pad of 2 oz
copper.
c)
Scale 1 : 1 on letter size
paper
2.
Pulse Test: Pulse Width < 300
μ
s, Duty Cycle < 2.0%
S
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相關代理商/技術參數
參數描述
SI6410DQ-T1 功能描述:MOSFET 30V 7.8A 1.5W RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
SI6410DQ-T1-E3 功能描述:MOSFET 30V 7.8A 1.5W RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
SI6410DQ-T1-GE3 功能描述:MOSFET 30V 7.8A 1.5W 14mohm @ 10V RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
SI6413DQ 制造商:VISHAY 制造商全稱:Vishay Siliconix 功能描述:P-Channel 1.8-V (G-S) MOSFET
SI6413DQ-T1-E3 功能描述:MOSFET 20V 8.8A 1.5W 10mohm @ 4.5V RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
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