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參數(shù)資料
| 型號： | SI5433DC |
| 廠商： | Vishay Intertechnology,Inc. |
| 元件分類： | MOSFETs |
| 英文描述： | P-Channel 20-V (D-S) MOSFET, Low-Threshold |
| 中文描述： | P通道20 - V（下局副局長）MOSFET的低閾值 |
| 文件頁數(shù)： | 1/5頁 |
| 文件大?。?/td> | 64K |
| 代理商： | SI5433DC |
FEATURES
TrenchFET Power MOSFET
Si5433BDC
Vishay Siliconix
New Product
Document Number: 73208
S-42241—Rev.A, 13-Dec-04
www.vishay.com
1
P-Channel 20-V (D-S) MOSFET
PRODUCT SUMMARY
V
DS
(V)
r
DS(on)
( )
I
D
(A)
Q
g
(Typ)
0.037 @ V
GS
=
4.5 V
6.7
20
0.050 @ V
GS
=
2.5 V
5.9
15
0.070 @ V
GS
=
1.8 V
5.0
1206-8 ChipFE
T
D
D
D
G
D
D
D
S
1
Bottom View
Marking Code
BL
XX
Lot Traceability
and Date Code
Part # Code
S
G
D
P-Channel MOSFET
Ordering Information:
Si5433BDC-T1—E3
ABSOLUTE MAXIMUM RATINGS (T
A
= 25 C UNLESS OTHERWISE NOTED)
Parameter
Symbol
5 secs
Steady State
Unit
Drain-Source Voltage
V
DS
20
V
Gate-Source Voltage
V
GS
8
Continuous Drain Current
(T
J
= 150 C)
a
T
A
= 25 C
I
D
6.7
4.8
T
A
= 85 C
4.8
3.5
A
Pulsed Drain Current
I
DM
20
Continuous Source Current
a
I
S
2.1
1.1
Maximum Power Dissipation
a
T
A
= 25 C
P
D
2.5
1.3
W
T
A
= 85 C
1.3
0.7
Operating Junction and Storage Temperature Range
T
J
, T
stg
55 to 150
C
Soldering Recommendations (Peak Temperature)
b, c
260
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Typical
Maximum
Unit
Maximum Junction-to-Ambient
t A bi
a
t
5 sec
R
thJA
45
50
Steady State
85
95
C/W
Maximum Junction-to-Foot (Drain)
Steady State
R
thJF
17
20
Notes
a.
b.
Surface Mounted on 1” x 1” FR4 Board.
See Reliability Manual for profile. The ChipFET is a leadless package. The end of the lead terminal is exposed copper (not plated) as a result of the singulation
process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not required to ensure adequate bottom side solder
interconnection.
Rework Conditions: manual soldering with a soldering iron is not recommended for leadless components.
c.
相關(guān)PDF資料 |
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| SI5433DC-T1 | P-Channel 20-V (D-S) MOSFET, Low-Threshold |
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| Si5441DC-T1-E3 | P-Channel 2.5-V (G-S) MOSFET |
| SI5443DC | P-Channel 2.5-V (G-S) MOSFET |
| SI5445BDC | P-Channel, 1.8-V (G-S) MOSFET |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| SI5433DC-T1 | 功能描述:MOSFET 20V 6.7A 2.5W RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| SI5433DC-T1-E3 | 功能描述:MOSFET 20V 6.7A 2.5W RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| SI5435BDC | 制造商:VISHAY 制造商全稱:Vishay Siliconix 功能描述:P-Channel 30-V (D-S) MOSFET |
| SI5435BDC_05 | 制造商:VISHAY 制造商全稱:Vishay Siliconix 功能描述:P-Channel 30-V (D-S) MOSFET |
| SI5435BDC-T1-E3 | 功能描述:MOSFET 30 Volt 5.9 Amp 2.5W RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
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