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參數(shù)資料
| 型號(hào)： | SI5406DC |
| 廠商： | Vishay Intertechnology,Inc. |
| 英文描述： | N-Channel 2.5-V (G-S) MOSFET |
| 中文描述： | N溝道的2.5 V（GS）的MOSFET的 |
| 文件頁(yè)數(shù)： | 2/4頁(yè) |
| 文件大?。?/td> | 98K |
| 代理商： | SI5406DC |
Si5406DC
Vishay Siliconix
www.vishay.com
2-2
Document Number: 71657
S-21251—Rev. B, 05-Aug-02
SPECIFICATIONS (T
J
= 25
_
C UNLESS OTHERWISE NOTED)
Parameter
Symbol
Test Condition
Min
Typ
Max
Unit
Static
Gate Threshold Voltage
V
GS(th)
V
DS
= V
GS
, I
D
= 1.2 mA
0.6
V
Gate-Body Leakage
I
GSS
V
DS
= 0 V, V
GS
=
8 V
100
nA
Zero Gate Voltage Drain Current
I
DSS
V
DS
= 9.6 V, V
GS
= 0 V
1
m
A
V
DS
= 9.6 V, V
GS
= 0 V, T
J
= 85
_
C
5
On-State Drain Current
a
I
D(on)
V
DS
≥
5 V, V
GS
= 4.5 V
20
A
Drain-Source On-State Resistance
a
r
DS(on)
V
GS
= 4.5 V, I
D
= 6.9 A
0.017
0.020
V
GS
= 2.5 V, I
D
= 2 A
0.021
0.025
Forward Transconductance
a
g
fs
V
DS
= 10 V, I
D
= 6.9 A
30
S
Diode Forward Voltage
a
V
SD
I
S
= 1.1 A, V
GS
= 0 V
0.7
1.2
V
Dynamic
b
Total Gate Charge
Q
g
13.7
20
Gate-Source Charge
Q
gs
V
DS
= 6 V, V
GS
= 4.5 V, I
D
= 6.9 A
2.3
nC
Gate-Drain Charge
Q
gd
4.1
Turn-On Delay Time
t
d(on)
17
25
Rise Time
t
r
V
= 6 V, R
= 6
I
D
1 A, V
GEN
= 4.5 V, R
G
= 6
46
70
Turn-Off Delay Time
t
d(off)
54
80
ns
Fall Time
t
f
29
45
Source-Drain Reverse Recovery Time
t
rr
I
F
= 1.1 A, di/dt = 100 A/
m
s
35
70
Notes
a.
b.
Pulse test; pulse width
≤
300
m
s, duty cycle
≤
2%.
Guaranteed by design, not subject to production testing.
TYPICAL CHARACTERISTICS (25
_
C UNLESS NOTED)
0
4
8
12
16
20
0.0
0.5
1.0
1.5
2.0
2.5
0
5
10
15
20
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
V
GS
= 5 thru 2.5 V
T
C
= 125
_
C
--55
_
C
2 V
25
_
C
Output Characteristics
Transfer Characteristics
V
DS
-- Drain-to-Source Voltage (V)
-
I
D
V
GS
-- Gate-to-Source Voltage (V)
-
I
D
1.5 V
1 V
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