參數(shù)資料
型號(hào)： Si5401DC-T1-E3
廠商： Vishay Intertechnology,Inc.
元件分類： MOSFETs
英文描述： P-Channel 20-V (D-S) MOSFET, Low-Threshold
中文描述： P通道20 - V（下局副局長）MOSFET的低閾值
文件頁數(shù)： 5/5頁
文件大?。?/td> 65K
代理商： SI5401DC-T1-E3
Si5401DC
Vishay Siliconix
New Product
Document Number: 73225
S-50038—Rev. A, 17-Jan-05
www.vishay.com
5
TYPICAL CHARACTERISTICS (25 C UNLESS NOTED)
10
3
10
2
1
10
10
1
10
4
2
1
0.1
0.01
0.2
0.1
0.05
0.02
Single Pulse
Duty Cycle = 0.5
Normalized Thermal Transient Impedance, Junction-to-Foot
Square Wave Pulse Duration (sec)
N
T
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and
Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see
.
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
SI5401DC-T1-GE3 功能描述:MOSFET 20V 7.1A 2.5W 32mohm @ 4.5V RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
SI5402BDC 制造商:VISHAY 制造商全稱:Vishay Siliconix 功能描述:N-Channel 30-V (D-S) MOSFET
SI5402BDC_08 制造商:VISHAY 制造商全稱:Vishay Siliconix 功能描述:N-Channel 30-V (D-S) MOSFET
SI5402BDC_11 制造商:VISHAY 制造商全稱:Vishay Siliconix 功能描述:N-Channel 30-V (D-S) MOSFET
SI5402BDC-T1-E3 功能描述:MOSFET 30V 6.7A 2.5W RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
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