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參數(shù)資料
| 型號(hào)： | SI4953ADY |
| 廠商： | Vishay Intertechnology,Inc. |
| 英文描述： | Dual p-channel SO-8 low-rDS(on) MOSFET |
| 中文描述： | 雙P溝道SO-8 低RDS（on）MOSFET |
| 文件頁(yè)數(shù)： | 2/4頁(yè) |
| 文件大?。?/td> | 43K |
| 代理商： | SI4953ADY |
Si4953DY
Vishay Siliconix
www.vishay.com FaxBack 408-970-5600
2
Document Number: 70153
S-31726—Rev. E, 18-Aug-03
SPECIFICATIONS (T
J
= 25 C UNLESS OTHERWISE NOTED)
Parameter
Symbol
Test Condition
Min
Typ
a
Max
Unit
Static
Gate Threshold Voltage
V
GS(th)
V
DS
= V
GS
, I
D
= -250 A
-1
V
Gate-Body Leakage
I
GSS
V
DS
= 0 V, V
GS
=
20 V
100
nA
Zero Gate Voltage Drain Current
I
DSS
V
DS
= -30 V, V
GS
= 0 V
-1
A
V
DS
= -30 V, V
GS
= 0 V, T
J
= 55 C
-25
On-State Drain Current
b
I
D(on)
V
DS
-5 V, V
GS
= -10 V
-20
A
Drain Source On State Resistance
Drain-Source On-State Resistance
b
r
DS(on)
V
GS
= -10 V, I
D
= -4.9 A
0.043
0.053
V
GS
= -4.5 V, I
D
= -3.6 A
0.070
0.095
Forward Transconductance
b
g
fs
V
DS
= -15 V, I
D
= -4.9 A
10
S
Diode Forward Voltage
b
V
SD
I
S
= -1.7 A, V
GS
= 0 V
0.8
-1.2
V
Dynamic
a
Total Gate Charge
Q
g
16
25
Gate-Source Charge
Q
gs
V
DS
= -15 V,
V
GS
= -10 V, I
D
= -4.9 A
5
nC
Gate-Drain Charge
Q
gd
2
Gate Resistance
R
g
2
7.1
Turn-On Delay Time
t
d(on)
9
15
Rise Time
t
r
V
= -15 V, R
= 15
-1 A, V
GEN
= -10 V, R
G
= 6
13
20
Turn-Off Delay Time
t
d(off)
I
D
25
40
ns
Fall Time
t
f
15
25
Source-Drain Reverse Recovery Time
t
rr
I
F
= -1.7 A, di/dt = 100 A/ s
60
90
Notes
a.
b.
For design aid only; not subject to production testing.
Pulse test; pulse width
300 s, duty cycle
2%.
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| SI4953ADY_06 | 制造商:VISHAY 制造商全稱(chēng):Vishay Siliconix 功能描述:Dual P-Channel 30-V (D-S) MOSFET |
| SI4953ADY-E3 | 功能描述:MOSFET 30V 4.9A 2W RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| SI4953ADY-T1 | 功能描述:MOSFET 30V 4.9A 2W RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| SI4953ADY-T1-E3 | 功能描述:MOSFET 30V 4.9A 2W RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| SI4953ADY-T1-GE3 | 功能描述:MOSFET 30V 3.9A 2.0W 53mohm @ 10V RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
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