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參數(shù)資料
| 型號： | SI4944DY |
| 廠商： | Vishay Intertechnology,Inc. |
| 元件分類： | MOSFETs |
| 英文描述： | Dual N-Channel 30-V (D-S) MOSFET with Schottky Diode |
| 中文描述： | 雙N溝道30 V的（副）MOSFET的肖特基二極管 |
| 文件頁數(shù)： | 1/5頁 |
| 文件大?。?/td> | 69K |
| 代理商： | SI4944DY |
FEATURES
TrenchFET Power MOSFET
100% R
g
Tested
APPLICATIONS
DC/DC Conversion
Load Switching
Si4944DY
Vishay Siliconix
New Product
Document Number: 72512
S-32131—Rev. A, 27-Oct-03
www.vishay.com
1
Dual N-Channel 30-V (D-S) MOSFET
PRODUCT SUMMARY
V
DS
(V)
r
DS(on)
( )
I
D
(A)
30
0.0095 @ V
GS
= 10 V
0.016 @ V
GS
= 4.5 V
12.2
9.4
N-Channel MOSFET
D
1
G
1
S
1
N-Channel MOSFET
D
2
G
2
S
2
D
1
D
1
D
2
D
2
SO-8
5
6
7
8
Top View
2
3
4
1
Ordering Information:
Si4944DY
Si4944DY-T1 (with Tape and Reel)
S
1
G
1
S
2
G
2
ABSOLUTE MAXIMUM RATINGS (T
A
= 25 C UNLESS OTHERWISE NOTED)
Parameter
Symbol
10 secs
Steady State
Unit
Drain-Source Voltage
V
DS
30
V
Gate-Source Voltage
V
GS
20
Continuous Drain Current
(T
J
= 150 C)
a
T
A
= 25 C
I
D
12.2
9.3
T
A
= 85 C
8.8
6.7
A
Pulsed Drain Current
I
DM
30
Continuous Source Current (Diode Conduction)
a
I
S
1.9
1.1
Maximum Power Dissipation
a
T
A
= 25 C
P
D
2.3
1.3
W
T
A
= 85 C
1.2
0.7
Operating Junction and Storage Temperature Range
T
J
, T
stg
55 to 150
C
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Typical
Maximum
Unit
Maximum Junction-to-Ambient
t A bi
a
t
10 sec
R
thJA
42
55
Steady State
75
95
C/W
Maximum Junction-to-Foot (Drain)
Steady State
R
thJF
19
25
Notes
a.
Surface Mounted on 1” x 1” FR4 Board.
相關PDF資料 |
PDF描述 |
|---|---|
| Si4944DY-T1 | Dual N-Channel 30-V (D-S) MOSFET with Schottky Diode |
| SI4946EY | Dual N-Channel 60-V (D-S), 175C MOSFET |
| Si4946EY-T1 | Dual N-Channel 60-V (D-S), 175C MOSFET |
| SI4947ADY | Dual P-Channel 30-V (D-S) MOSFET |
| SI4947ADY-T1 | Dual P-Channel 30-V (D-S) MOSFET |
相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| SI4944DY-T1 | 制造商:Vishay Semiconductors 功能描述: |
| SI4944DY-T1-E3 | 功能描述:MOSFET DUAL N-CH 30V (D-S) RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| SI4944DY-T1-GE3 | 功能描述:MOSFET 30V 12.2A 2.3W 9.5mohm @ 10V RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| Si4946BEY | 制造商:Vishay Intertechnologies 功能描述:Trans MOSFET N-CH 60V 5.3A 8-Pin SOIC N |
| SI4946BEY_09 | 制造商:VISHAY 制造商全稱:Vishay Siliconix 功能描述:Dual N-Channel 60-V (D-S) 175 °C MOSFET |
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