參數(shù)資料
型號(hào)： SI4931DY-T1
廠商： Vishay Intertechnology,Inc.
英文描述： Dual P-Channel 12-V (D-S) MOSFET
中文描述： 雙P溝道12 V的（副）MOSFET的
文件頁(yè)數(shù)： 2/5頁(yè)
文件大?。?/td> 70K
代理商： SI4931DY-T1
Si4931DY
Vishay Siliconix
New Product
www.vishay.com
2
Document Number: 72379
S-32411—Rev. B, 24-Nov-03
SPECIFICATIONS (T
J
= 25 C UNLESS OTHERWISE NOTED)
Parameter
Symbol
Test Condition
Min
Typ
Max
Unit
Static
Gate Threshold Voltage
V
GS(th)
V
DS
= V
GS
, I
D
=
350 A
0.4
1.0
V
Gate-Body Leakage
I
GSS
V
DS
= 0 V, V
GS
=
8
V
100
nA
Zero Gate Voltage Drain Current
I
DSS
V
DS
=
12 V, V
GS
= 0 V
1
A
V
DS
=
12 V, V
GS
= 0 V, T
J
= 55 C
5
On-State Drain Current
a
I
D(on)
V
DS
=
5 V, V
GS
=
4.5 V
30
A
V
GS
=
4.5 V, I
D
=
8.9 A
0.0145
0.018
Drain-Source On-State Resistance
a
r
DS(on)
V
GS
=
2.5 V, I
D
=
8.1 A
0.018
0.022
V
GS
=
1.8 V, I
D
=
3.6 A
0.023
0.028
Forward Transconductance
a
g
fs
V
DS
=
6
V, I
D
=
8.9 A
26
S
Diode Forward Voltage
a
V
SD
I
S
=
1.7 A, V
GS
= 0 V
0.7
1.2
V
Dynamic
b
Total Gate Charge
Q
g
34.5
52
Gate-Source Charge
Q
gs
V
DS
=
6 V,
V
GS
=
4.5 V, I
D
=
8.9 A
5.1
nC
Gate-Drain Charge
Q
gd
R
g
t
d(on)
9.6
Gate Resistance
9
Turn-On Delay Time
25
40
Rise Time
t
r
V
=
6 V, R
= 6
1 A, V
GEN
=
4.5 V, R
G
= 6
46
70
Turn-Off Delay Time
t
d(off)
I
D
230
345
ns
Fall Time
t
f
155
235
Source-Drain Reverse Recovery Time
t
rr
I
F
=
1.7 A, di/dt = 100 A/ s
128
200
Notes
a.
b.
Pulse test; pulse width
Guaranteed by design, not subject to production testing.
300 s, duty cycle
2%.
TYPICAL CHARACTERISTICS (25 C UNLESS NOTED)
0
6
12
18
24
30
0.0
0.5
1.0
1.5
2.0
2.5
0
6
12
18
24
30
0
1
2
3
4
5
V
GS
= 5 thru 2 V
T
C
= 125 C
55 C
25 C
Output Characteristics
Transfer Characteristics
V
DS
Drain-to-Source Voltage (V)
I
D
V
GS
Gate-to-Source Voltage (V)
I
D
1 V
1.5 V
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
SI4931DY-T1-E3 功能描述:MOSFET 12V 8.9A 1.1W RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
SI4931DY-T1-GE3 功能描述:MOSFET 12V 8.9A 2.0W 18mohm @ 4.5V RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
SI4932DY-T1-GE3 功能描述:MOSFET 30V 8.0A 3.2W 15mohm @ 10V RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
SI4933DY 制造商:VISHAY 制造商全稱:Vishay Siliconix 功能描述:Dual P-Channel 12-V (D-S) MOSFET
SI4933DY-T1 功能描述:MOSFET 12V 9.8A 1.1W RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
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