參數(shù)資料
型號: SI4923DY
廠商: Vishay Intertechnology,Inc.
元件分類: MOSFETs
英文描述: Dual P-Channel 30-V (D-S) MOSFET
中文描述: 雙P溝道30V的(D-S)MOSFET
文件頁數(shù): 3/5頁
文件大?。?/td> 44K
代理商: SI4923DY
Si4923DY
Vishay Siliconix
New Product
Document Number: 72069
S-22120
Rev. A, 25-Nov-02
www.vishay.com
3
TYPICAL CHARACTERISTICS (25 C UNLESS NOTED)
-
r
D
)
0
800
1600
2400
3200
0
5
10
15
20
25
30
0.6
0.8
1.0
1.2
1.4
-50
-25
0
25
50
75
100
125
150
0
2
4
6
8
10
0
10
20
30
40
50
0.000
0.005
0.010
0.015
0.020
0.025
0.030
0.035
0.040
0
6
12
18
24
30
V
DS
- Drain-to-Source Voltage (V)
C
oss
C
iss
V
DS
= 15 V
I
D
= 8.3 A
I
D
- Drain Current (A)
V
GS
= 10 V
I
D
V
GS
= 10 V
Gate Charge
On-Resistance vs. Drain Current
-
Q
g
- Total Gate Charge (nC)
C
V
G
Capacitance
On-Resistance vs. Junction Temperature
T
J
- Junction Temperature ( C)
(
-
r
D
)
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
0.00
0.02
0.04
0.06
0.08
0.10
0
2
4
6
8
10
T
J
= 150 C
I
D
= 8.3 A
40
10
1
Source-Drain Diode Forward Voltage
On-Resistance vs. Gate-to-Source Voltage
-
r
D
)
V
SD
- Source-to-Drain Voltage (V)
V
GS
- Gate-to-Source Voltage (V)
-
I
S
T
J
= 25 C
C
rss
V
GS
= 4.5 V
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
SI4923DY-T1 功能描述:MOSFET 30V 8.3A 1.1W RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS(導(dǎo)通):0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
SI4923DY-T1-E3 功能描述:MOSFET 30V 8.3A 2.0W 21mohm @ 10V RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS(導(dǎo)通):0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
SI4923DY-T1-GE3 功能描述:MOSFET 30V 8.3A 2.0W 21mohm @ 10V RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS(導(dǎo)通):0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
SI4924DY 功能描述:MOSFET 30V 4.7/9A RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS(導(dǎo)通):0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
SI4924DY-T1 制造商:VISHAY 制造商全稱:Vishay Siliconix 功能描述:Asymetrical Dual N-Channel 30-V (D-S) MOSFET