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參數(shù)資料
| 型號： | SI4872DY |
| 廠商： | Vishay Intertechnology,Inc. |
| 英文描述： | N-Channel Reduced Qg, Fast Switching MOSFET |
| 中文描述： | N溝道減少Q(mào)g和，快速開關(guān)MOSFET |
| 文件頁數(shù)： | 3/4頁 |
| 文件大?。?/td> | 57K |
| 代理商： | SI4872DY |
Si4872DY
Vishay Siliconix
New Product
Document Number: 71248
S-01552—Rev. A, 17-Jul-00
www.vishay.com FaxBack 408-970-5600
3
V
SD
– Source-to-Drain Voltage (V)
0
0.01
0.02
0.03
0.04
0.05
0
2
4
6
8
10
–
r
D
)
V
GS
– Gate-to-Source Voltage (V)
0
0.2
0.4
0.6
0.8
1.0
1.2
0
0.003
0.006
0.009
0.012
0.015
0
10
20
30
40
50
0
2
4
6
8
10
0
12
24
36
48
60
0.6
0.8
1.0
1.2
1.4
1.6
1.8
–50
–25
0
25
50
75
100
125
150
0
800
1600
2400
3200
4000
0
5
10
15
20
25
30
C
rss
C
oss
C
iss
V
DS
= 15 V
I
D
= 15 A
V
GS
= 10 V
I
D
V
GS
= 10 V
Gate Charge
On-Resistance vs. Drain Current
–
Q
g
– Total Gate Charge (nC)
V
DS
– Drain-to-Source Voltage (V)
C
V
G
–
r
D
)
I
D
– Drain Current (A)
Capacitance
On-Resistance vs. Junction Temperature
T
J
– Junction Temperature ( C)
(
–
r
D
)
T
J
= 150 C
T
J
= 25 C
I
D
= 15 A
50
10
1
Source-Drain Diode Forward Voltage
On-Resistance vs. Gate-to-Source Voltage
–
I
S
V
GS
= 4.5 V
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| SI4872DY-E3 | 功能描述:MOSFET 30V 15A 3.1W RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| SI4872DY-T1 | 功能描述:MOSFET 30V 15A 3.1W RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| SI4872DY-T1-E3 | 功能描述:MOSFET 30V 15A 3.1W RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| SI4873DY-T1-E3 | 制造商:Vishay Intertechnologies 功能描述:Trans MOSFET P-CH 20V 6.5A 8-Pin SOIC N T/R |
| SI4874BDY | 制造商:VISHAY 制造商全稱:Vishay Siliconix 功能描述:N-Channel 30-V MOSFET |
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