- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄368616 > SI4864DY (Vishay Intertechnology,Inc.) N-Channel 20-V (D-S) MOSFET PDF資料下載
參數(shù)資料
| 型號： | SI4864DY |
| 廠商： | Vishay Intertechnology,Inc. |
| 英文描述： | N-Channel 20-V (D-S) MOSFET |
| 中文描述： | N通道20V（D-S）MOSFET |
| 文件頁數(shù)： | 2/4頁 |
| 文件大?。?/td> | 42K |
| 代理商： | SI4864DY |
Si4864DY
Vishay Siliconix
New Product
www.vishay.com
2
Document Number: 71449
S-03662—Rev. B, 14-Apr-03
SPECIFICATIONS (T
J
= 25 C UNLESS OTHERWISE NOTED)
Parameter
Symbol
Test Condition
Min
Typ
Max
Unit
Static
Gate Threshold Voltage
V
GS(th)
V
DS
= V
GS
, I
D
= 250 A
0.6
V
Gate-Body Leakage
I
GSS
V
DS
= 0 V, V
GS
=
8 V
100
nA
Zero Gate Voltage Drain Current
I
DSS
V
DS
= 16 V, V
GS
= 0 V
1
A
V
DS
= 16 V, V
GS
= 0 V, T
J
= 55 C
5
On-State Drain Current
a
I
D(on)
V
DS
5 V, V
GS
= 4.5
V
30
A
Drain-Source On-State Resistance
a
r
DS(on)
V
GS
= 4.5
V, I
D
= 25 A
0.0028
0.0035
V
GS
= 2.5 V, I
D
= 20 A
0.0038
0.0047
Forward Transconductance
a
g
fs
V
DS
= 6 V, I
D
= 25 A
70
S
Diode Forward Voltage
a
V
SD
I
S
= 2.9 A, V
GS
= 0 V
0.70
1.1
V
Dynamic
b
Total Gate Charge
Q
g
47
70
Gate-Source Charge
Q
gs
V
DS
= 10 V,
V
GS
= 4.5 V, I
D
= 25 A
10
nC
Gate-Drain Charge
Q
gd
13.4
Gate Resistance
R
g
0.5
1.5
2.6
Turn-On Delay Time
t
d(on)
40
60
Rise Time
t
r
DD
L
V
= 10 V, R
= 10
1 A, V
GEN
= 4.5 V, R
G
= 6
44
65
ns
Turn-Off Delay Time
t
d(off)
I
D
150
240
Fall Time
t
f
72
110
Source-Drain Reverse Recovery Time
t
rr
I
F
= 2.9 A, di/dt = 100 A/ s
57
80
ns
Notes
a.
b.
Pulse test; pulse width
300 s, duty cycle
2%.
Guaranteed by design, not subject to production testing.
TYPICAL CHARACTERISTICS (25 C UNLESS NOTED)
0
10
20
30
40
50
60
0.0
0.5
1.0
1.5
2.0
2.5
0
10
20
30
40
50
60
0
1
2
3
4
5
V
GS
= 5 thru 2.5 V
25 C
T
C
= 125 C
-55 C
2 V
Output Characteristics
Transfer Characteristics
V
DS
- Drain-to-Source Voltage (V)
-
I
D
V
GS
- Gate-to-Source Voltage (V)
-
I
D
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| SI4866DY | N-Channel Reduced Qg, Fast Switching MOSFET |
| SI4872DY | N-Channel Reduced Qg, Fast Switching MOSFET |
| Si4874DY | N-Channel 30-V MOSFET |
| SI4874DY | Single N-Channel, Logic Level, PowerTrencha MOSFET |
| SI4876DY-T1 | N-Channel 20-V (D-S) MOSFET |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| SI4864DY-E3 | 功能描述:MOSFET 20V 25A 3.5W RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| SI4864DY-T1 | 功能描述:MOSFET 20V 25A 1.6W RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| SI4864DY-T1-E3 | 功能描述:MOSFET 20 Volt 25 Amp 3.5W RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| SI4864DY-T1-GE3 | 功能描述:MOSFET 20V 25A 3.5W 3.5mohm @ 4.5V RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| SI4866BDY | 制造商:VISHAY 制造商全稱:Vishay Siliconix 功能描述:N-Channel 12-V (D-S) MOSFET |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。