參數(shù)資料
型號(hào)： SI4834DY
廠商： Vishay Intertechnology,Inc.
元件分類(lèi)： MOSFETs
英文描述： Dual N-Channel 30-V (D-S) MOSFET with Schottky Diode
中文描述： 雙N溝道30 V的（副）MOSFET的肖特基二極管
文件頁(yè)數(shù)： 2/5頁(yè)
文件大?。?/td> 48K
代理商： SI4834DY
Si4834DY
Vishay Siliconix
www.vishay.com
2
Document Number: 71183
S-31062—Rev. B, 26-May-03
MOSFET SPECIFICATIONS (T
J
= 25 C UNLESS OTHERWISE NOTED).
Parameter
Symbol
Test Condition
Min
Typ
a
Max
Unit
Static
Gate Threshold Voltage
V
GS(th)
I
GSS
V
DS
= V
GS
, I
D
= 250 A
V
DS
= 0 V, V
GS
=
0.8
V
Gate-Body Leakage
20 V
100
nA
= 24 V V
V
DS
= 24 V, V
GS
= 0 V
Ch-1
Ch 1
100
Zero Gate Voltage Drain Current
I
DSS
Ch-2
1
A
= 24 V V
= 0 V T
V
DS
= 24 V, V
GS
= 0 V, T
J
= 85 C
Ch-1
Ch 1
2000
Ch-2
15
On-State Drain Current
b
I
D(on)
V
DS
= 5 V, V
GS
= 10 V
V
GS
= 10 V, I
D
= 7.5 A
V
GS
= 4.5 V, I
D
= 6.5 A
V
DS
= 15 V, I
D
= 7.5 A
20
A
Drain Source On State Resistance
Drain-Source On-State Resistance
b
r
DS(on)
0.018
0.022
0.024
0.030
Forward Transconductance
b
g
fs
22
S
Diode Forward Voltage
b
V
SD
= 1 A V
I
S
= 1 A, V
GS
= 0 V
Ch-1
Ch 1
0.47
0.5
V
Ch-2
0.8
1.2
Dynamic
a
Total Gate Charge
Q
g
Q
gs
Q
gd
R
g
t
d(on)
t
r
t
d(off)
t
f
13
20
Gate-Source Charge
V
= 15 V,
V
= 10 V, I
= 7.5 A
DS
GS
2
nC
Gate-Drain Charge
D
2.7
Gate Resistance
0.5
1.9
3.2
Turn-On Delay Time
8
16
Rise Time
V
= 15 V, R
= 15
1 A, V
GEN
= 10 V, R
G
= 6
10
20
Turn-Off Delay Time
I
D
21
40
ns
Fall Time
10
20
Source Drain Reverse Recovery Time
Source-Drain Reverse Recovery Time
t
rr
= 1 7 A di/dt = 100 A/ s
I
F
= 1.7 A, di/dt = 100 A/ s
Ch-1
Ch 1
32
70
Ch-2
40
80
Notes
a.
b.
Guaranteed by design, not subject to production testing.
Pulse test; pulse width
300 s, duty cycle
2%.
SCHOTTKY SPECIFICATIONS (T
J
= 25 C UNLESS OTHERWISE NOTED)
Parameter
Symbol
Test Condition
Min
Typ
Max
Unit
Forward Voltage Drop
V
F
I
F
= 1.0 A
0.47
0.50
V
I
F
= 1.0 A, T
J
= 125 C
V
r
= 30 V
V
r
= 30 V, T
J
= 100 C
V
r
= -30 V, T
J
= 125 C
V
r
= 10 V
0.36
0.42
0.004
0.100
Maximum Reverse Leakage Current
I
rm
0.7
10
mA
3.0
20
Junction Capacitance
C
T
50
pF
相關(guān)PDF資料
PDF描述
Si4834DY-T1 Dual N-Channel 30-V (D-S) MOSFET with Schottky Diode
SI4842DY Dual N-Channel 30-V (D-S) MOSFET with Schottky Diode
SI4845DY P-Channel 20-V (D-S) MOSFET,Low-Threshold
SI4848DY N-Channel 150-V (D-S) MOSFET
SI4848DY-T1 N-Channel 150-V (D-S) MOSFET
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
SI4834DY-E3 功能描述:MOSFET 30V 7.5A 2W RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
SI4834DY-T1 功能描述:MOSFET 30V 7.5A 2W RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
SI4834DY-T1-E3 功能描述:MOSFET 30V 7.5A 2W RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
Si4835-B30-GU 功能描述:射頻接收器 EnhAM/FM/SW RX Mech tuned radios RoHS:否 制造商:Skyworks Solutions, Inc. 類(lèi)型:GPS Receiver 封裝 / 箱體:QFN-24 工作頻率:4.092 MHz 工作電源電壓:3.3 V 封裝:Reel
Si4835-B30-GUR 功能描述:射頻接收器 EnhAM/FM/SW RX Mech tuned radios RoHS:否 制造商:Skyworks Solutions, Inc. 類(lèi)型:GPS Receiver 封裝 / 箱體:QFN-24 工作頻率:4.092 MHz 工作電源電壓:3.3 V 封裝:Reel
發(fā)布緊急采購(gòu)，3分鐘左右您將得到回復(fù)。

采購(gòu)需求

(若只采購(gòu)一條型號(hào)，填寫(xiě)一行即可)

發(fā)布成功！您可以繼續(xù)發(fā)布采購(gòu)。也可以進(jìn)入我的后臺(tái)，查看報(bào)價(jià)

發(fā)布成功！您可以繼續(xù)發(fā)布采購(gòu)。也可以進(jìn)入我的后臺(tái)，查看報(bào)價(jià)

*型號(hào) *數(shù)量 廠商 批號(hào) 封裝
添加更多采購(gòu)

我的聯(lián)系方式

*
*
*