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參數(shù)資料
| 型號(hào)： | Si4830ADY |
| 廠商： | Vishay Intertechnology,Inc. |
| 英文描述： | Dual N-Ch. mosfet plus Schottky diode; |
| 中文描述： | 帶肖特基二極管的雙N溝道MOSFET |
| 文件頁(yè)數(shù)： | 2/5頁(yè) |
| 文件大?。?/td> | 65K |
| 代理商： | SI4830ADY |
Si4830DY
Vishay Siliconix
www.vishay.com
2
Document Number: 71161
S-31989—Rev. C, 13-Oct-03
MOSFET SPECIFICATIONS (T
J
= 25 C UNLESS OTHERWISE NOTED).
Parameter
Symbol
Test Condition
Min
Typ
a
Max
Unit
Static
Gate Threshold Voltage
V
GS(th)
I
GSS
V
DS
= V
GS
, I
D
= 250 A
V
DS
= 0 V, V
GS
=
0.8
V
Gate-Body Leakage
20 V
100
nA
= 30 V V
V
DS
= 30 V, V
GS
= 0 V
Ch-1
Ch 1
1
Zero Gate Voltage Drain Current
I
DSS
Ch-2
100
A
= 30 V V
= 0 V T
V
DS
= 30 V, V
GS
= 0 V, T
J
= 85 C
Ch-1
Ch 1
15
Ch-2
2000
On-State Drain Current
b
I
D(on)
V
DS
= 5 V, V
GS
= 10 V
V
GS
= 10 V, I
D
= 7.5 A
V
GS
= 4.5 V, I
D
= 6.5 A
V
DS
= 15 V, I
D
= 7.5 A
20
A
Drain Source On State Resistance
Drain-Source On-State Resistance
b
r
DS(on)
0.018
0.022
0.024
0.030
Forward Transconductance
b
g
fs
22
S
Diode Forward Voltage
b
V
SD
= 1 A V
I
S
= 1 A, V
GS
= 0 V
Ch-1
Ch 1
0.8
1.2
V
Ch-2
0.47
0.5
Dynamic
a
Total Gate Charge
Q
g
Q
gs
Q
gd
R
g
t
d(on)
t
r
t
d(off)
t
f
13
20
Gate-Source Charge
V
= 15 V,
V
= 10 V, I
= 7.5 A
DS
GS
2
nC
Gate-Drain Charge
D
2.7
Gate Resistance
0.5
3.2
Turn-On Delay Time
8
16
Rise Time
V
= 15 V, R
= 15
1 A, V
GEN
= 10 V, R
G
= 6
10
20
Turn-Off Delay Time
I
D
21
40
ns
Fall Time
10
20
Source Drain Reverse Recovery Time
Source-Drain Reverse Recovery Time
t
rr
= 1 7 A di/dt = 100 A/ s
I
F
= 1.7 A, di/dt = 100 A/ s
Ch-1
Ch 1
40
80
Ch-2
32
70
Notes
a.
b.
Guaranteed by design, not subject to production testing.
Pulse test; pulse width
300 s, duty cycle
2%.
SCHOTTKY SPECIFICATIONS (T
J
= 25 C UNLESS OTHERWISE NOTED)
Parameter
Symbol
Test Condition
Min
Typ
Max
Unit
Forward Voltage Drop
V
F
I
F
= 1.0 A
0.47
0.50
V
I
F
= 1.0 A, T
J
= 125 C
V
r
= 30 V
V
r
= 30 V, T
J
= 100 C
V
r
= -30 V, T
J
= 125 C
V
r
= 10 V
0.36
0.42
0.004
0.100
Maximum Reverse Leakage Current
I
rm
0.7
10
mA
3.0
20
Junction Capacitance
C
T
50
pF
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| SI4830ADY-E3 | 制造商:Vishay Siliconix 功能描述:MOSFET Transistor Transistor Polarity:NP |
| SI4830ADY-T1-E3 | 功能描述:MOSFET 30V 7.5A 2W RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| SI4830ADY-T1-GE3 | 功能描述:MOSFET 30V 7.5A 2.0W 22mohm @ 10V RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| SI4830CDY | 制造商:VISHAY 制造商全稱(chēng):Vishay Siliconix 功能描述:Dual N-Channel 30-V (D-S) MOSFET with Schottky Diode |
| SI4830CDY-T1-E3 | 功能描述:MOSFET 30V 8.0A 2.9W 20mohm @ 10V RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
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