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參數(shù)資料
| 型號： | SI4825DY |
| 廠商： | Vishay Intertechnology,Inc. |
| 英文描述： | P-Channel 30-V (D-S) MOSFET VDS = -30V; VGS = ± 25V |
| 中文描述： | P溝道30V（D-S）MOSFET VDS=-30V;VGS=±25V |
| 文件頁數(shù)： | 2/4頁 |
| 文件大小： | 56K |
| 代理商： | SI4825DY |
Si4825DY
Vishay Siliconix
New Product
www.vishay.com FaxBack 408-970-5600
2
Document Number: 71291
S-10679—Rev. A, 31-Jul-00
Parameter
Symbol
Test Condition
Min
Typ
Max
Unit
Static
Gate Threshold Voltage
V
GS(th)
V
DS
= V
GS
, I
D
= –250 A
–1.0
V
Gate-Body Leakage
I
GSS
V
DS
= 0 V, V
GS
=
25
V
100
nA
Zero Gate Voltage Drain Current
I
DSS
V
DS
= –24 V, V
GS
= 0 V
–1
A
V
DS
= –24 V, V
GS
= 0 V, T
J
= 55 C
–5
On-State Drain Current
a
I
D(on)
V
DS
–5 V, V
GS
= –10 V
–50
A
Drain-Source On-State Resistance
a
r
DS(on)
V
GS
= –10 V, I
D
= –11.5 A
0.012
0.014
V
GS
= –4.5 V, I
D
= –9.2 A
0.018
0.022
Forward Transconductance
a
g
fs
V
DS
= –15
V, I
D
= –11.5 A
28
S
Diode Forward Voltage
a
V
SD
I
S
= –2.5 A, V
GS
= 0 V
–0.8
–1.2
V
Dynamic
b
Total Gate Charge
Q
g
V
DS
= –15 V V
V
GS
= –10 V, I
D
= –11.5 A
10 V I
11 5 A
55
71
Gate-Source Charge
Q
gs
15.5
nC
Gate-Drain Charge
Q
gd
7.5
Turn-On Delay Time
t
d(on)
V
= –15 ,
=15
1 A V
–1 A, V
GEN
= –10 V, R
G
= 6
15
25
Rise Time
t
r
I
D
10 V R
13
20
Turn-Off Delay Time
t
d(off)
97
150
ns
Fall Time
t
f
51
75
Source-Drain Reverse Recovery Time
t
rr
I
F
= –2.5 A, di/dt = 100 A/ s
45
80
Notes
a.
b.
Pulse test; pulse width
Guaranteed by design, not subject to production testing.
300 s, duty cycle
2%.
0
10
20
30
40
50
0
1
2
3
4
5
0
10
20
30
40
50
0
1
2
3
4
5
V
GS
= 10 thru 5 V
T
C
= 125 C
–55 C
25 C
Output Characteristics
Transfer Characteristics
V
DS
– Drain-to-Source Voltage (V)
–
I
D
V
GS
– Gate-to-Source Voltage (V)
–
I
D
4 V
3 V
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相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| SI4825DY_13 | 制造商:VISHAY 制造商全稱:Vishay Siliconix 功能描述:P-Channel 30-V (D-S) MOSFET |
| SI4825DY-E3 | 功能描述:MOSFET 30V 11.5A 3W RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| SI4825DY-T1 | 功能描述:MOSFET 30V 11.5A 3W RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| SI4825DY-T1-E3 | 功能描述:MOSFET 30V 11.5A 3W RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| SI4825DY-T1-E3 | 制造商:Vishay Siliconix 功能描述:P CHANNEL MOSFET -30V 9.2A SOIC |
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