參數(shù)資料
型號(hào)： SI4818DY-T1
廠商： Vishay Intertechnology,Inc.
元件分類： MOSFETs
英文描述： Dual N-Channel 30-V (D-S) MOSFET with Schottky Diode
中文描述： 雙N溝道30 V的（副）MOSFET的肖特基二極管
文件頁數(shù)： 2/8頁
文件大?。?/td> 68K
代理商： SI4818DY-T1
Si4818DY
Vishay Siliconix
www.vishay.com
2
Document Number: 71122
S-31062—Rev. B, 26-May-03
MOSFET SPECIFICATIONS (T
J
= 25 C UNLESS OTHERWISE NOTED).
Parameter
Symbol
Test Condition
Min
Typ
a
Max
Unit
Static
Gate Threshold Voltage
V
GS(th)
V
DS
= V
GS
, I
D
= 250 A
Ch-1
0.8
V
Ch-2
1.0
Gate Body Leakage
Gate-Body Leakage
I
GSS
= 0 V V
V
DS
= 0 V, V
GS
= 20 V
Ch-1
Ch 1
100
100
1
100
15
2000
nA
Ch-2
Ch-1
Ch 1
= 24 V V
V
DS
= 24 V, V
GS
= 0 V
Zero Gate Voltage Drain Current
I
DSS
Ch-2
Ch-1
Ch 1
A
= 24 V V
= 0 V T
V
DS
= 24 V, V
GS
= 0 V, T
J
= 85 C
Ch-2
Ch-1
Ch 1
On State Drain Current
On-State Drain Current
b
I
D(on)
= 5 V V
V
DS
= 5 V, V
GS
= 10 V
20
30
A
Ch-2
Ch-1
Ch 1
V
GS
= 10 V, I
D
= 6.3 A
V
GS
= 10 V, I
D
= 9.5 A
V
GS
= 4.5 V, I
D
= 5.4 A
V
GS
= 4.5 V, I
D
= 8.2 A
V
DS
= 15 V, I
D
= 6.3 A
V
DS
= 15 V, I
D
= 9.5 A
I
S
= 1.3 A, V
GS
= 0 V
I
S
= 1 A, V
GS
= 0 V
0.018
0.0125
0.024
0.0165
17
28
0.7
0.47
0.022
0.0155
0.030
0.0205
Drain Source On State Resistance
Drain-Source On-State Resistance
b
r
DS(on)
Ch-2
Ch-1
Ch 1
Ch-2
Ch-1
Ch 1
Forward Transconductance
b
g
fs
S
Ch-2
Ch-1
Ch 1
Diode Forward Voltage
b
V
SD
1.1
0.5
V
Ch-2
Dynamic
a
Total Gate Charge
Q
g
Ch-1
8.0
12
Channel-1
Channel 1
Ch-2
15
1.75
5.3
3.2
4.6
23
Gate Source Charge
Gate-Source Charge
Q
gs
V
DS
= 15 V,
V
GS
= 5 V, I
D
= 6.3 A
Ch-1
Ch 1
nC
Channel-2
Channel 2
Ch-2
Ch-1
Ch 1
Gate Drain Charge
Gate-Drain Charge
Q
gd
V
DS
= 15 V,
V
GS
= 5 V, I
D
= -9.5 A
Ch-2
Ch-1
Ch 1
Gate Resistance
R
g
1.5
0.5
6.1
2.6
20
30
10
10
50
80
16
24
60
70
Ch-2
Ch-1
Ch 1
Turn On Delay Time
Turn-On Delay Time
t
d(on)
10
15
5
5
26
44
8
12
30
32
Channel 1
Channel-1
Ch-2
Ch-1
Ch 1
Rise Time
t
r
V
= 15 V, R
= 15
1 A, V
GEN
= 10 V, R
G
= 6
I
D
Ch-2
Ch-1
Ch 1
Turn Off Delay Time
Turn-Off Delay Time
d( ff)
t
d(off)
Channel-2
ns
V
= 15 V, R
= 15
1 A V
1 A, V
GEN
= 10 V R 6
G
= 6
I
D
Ch-2
Ch-1
Ch 1
Fall Time
t
f
Ch-2
Ch-1
Ch 1
Source Drain Reverse Recovery Time
Source-Drain Reverse Recovery Time
t
rr
I
F
= 1.3 A, di/dt = 100 A/ s
I
F
= 2.2 A, di/dt = 100 A/ s
Ch-2
Notes
a.
b.
Guaranteed by design, not subject to production testing.
Pulse test; pulse width
300 s, duty cycle
2%.
SCHOTTKY SPECIFICATIONS (T
J
= 25 C UNLESS OTHERWISE NOTED)
Parameter
Symbol
Test Condition
Min
Typ
Max
Unit
Forward Voltage Drop
V
F
I
F
= 1.0 A
0.47
0.50
V
I
F
= 1.0 A, T
J
= 125 C
V
r
= 30 V
V
r
= 30 V, T
J
= 100 C
V
r
= -30 V, T
J
= 125 C
V
r
= 10 V
0.36
0.42
0.004
0.100
Maximum Reverse Leakage Current
I
rm
0.7
10
mA
3.0
20
Junction Capacitance
C
T
50
pF
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