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參數(shù)資料
| 型號： | SI4800 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | JFETs |
| 英文描述： | N-channel enhancement mode field-effect transistor |
| 中文描述： | 9 A, 30 V, 0.0185 ohm, N-CHANNEL, Si, POWER, MOSFET, MS-012AA |
| 封裝： | PLASTIC, SO-8 |
| 文件頁數(shù)： | 5/13頁 |
| 文件大?。?/td> | 254K |
| 代理商： | SI4800 |
Philips Semiconductors
Si4800
N-channel enhancement mode field-effect transistor
Product data
Rev. 01 — 13 July 2001
5 of 13
9397 750 08412
Philips Electronics N.V. 2001. All rights reserved.
8.
Characteristics
Table 5:
T
j
= 25
°
C unless otherwise specified
Symbol Parameter
Static characteristics
V
GS(th)
gate-source threshold voltage
I
DSS
drain-source leakage current
Characteristics
Conditions
Min
Typ
Max
Unit
I
D
= 250
μ
A; V
DS
= V
GS
; T
j
= 25
°
C
V
DS
= 24 V; V
GS
= 0 V
T
j
= 25
°
C
T
j
= 55
°
C
V
GS
=
±
20 V; V
DS
= 0 V
V
DS
≥
5; V
GS
= 10 V
V
GS
= 10 V; I
D
= 9 A;
Figure 7
and
8
V
GS
= 4.5 V; I
D
= 7 A;
Figure 7
and
8
0.8
V
30
15.5
27.5
1
5
100
18.5
33
μ
A
μ
A
nA
A
m
m
I
GSS
I
D(on)
R
DSon
gate-source leakage current
On-state drain current
drain-source on-state resistance
Dynamic characteristics
g
fs
forward transconductance
Q
g(tot)
total gate charge
Q
gs
gate-source charge
Q
gd
gate-drain (Miller) charge
t
d(on)
turn-on delay time
t
r
rise time
t
d(off)
turn-off delay time
t
f
fall time
Source-drain (reverse) diode
V
SD
source-drain (diode forward) voltage I
S
= 2.3A; V
GS
= 0 V;
Figure 12
t
rr
reverse recovery time
V
DS
= 15 V; I
D
= 9 A
I
D
= 9 A; V
DD
= 15 V; V
GS
= 5 V;
Figure 13
19
19
4
7.5
11
8
22
9
16
15
30
15
S
nC
nC
nC
ns
ns
ns
ns
V
DD
= 15 V; R
D
= 15
; V
GS
= 10 V; R
G
= 6
0.7
50
1.2
80
V
ns
I
S
= 2.3 A; dI
S
/dt =
100 A/
μ
s; V
GS
= 0 V
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