參數(shù)資料
型號： SI4542D
廠商： Fairchild Semiconductor Corporation
英文描述： 30V Complementary PowerTrench MOSFET
中文描述： 30V的互補(bǔ)的PowerTrench MOSFET的
文件頁數(shù)： 2/4頁
文件大?。?/td> 56K
代理商： SI4542D
Si4542DY Rev A
Electrical Characteristics
Symbol
Parameter
T
A
= 25°C unless otherwise noted
Test Conditions
Type
Min
Typ Max Units
Off Characteristics
BV
DSS
Drain-Source Breakdown
Voltage
BV
DSS
T
J
Temperature Coefficient
I
DSS
Zero Gate Voltage Drain
Current
I
GSS
Gate-Body Leakage
V
GS
= 0 V, I
D
= 250 μA
V
GS
= 0 V, I
D
= –250 μA
I
D
= 250 μA, Referenced to 25
°
C
I
D
= –250 μA, Referenced to 25
°
C
V
DS
= 24 V, V
GS
= 0 V
V
DS
= –24 V, V
GS
= 0 V
V
GS
= +20 V, V
DS
= 0 V
V
GS
= +20 V, V
DS
= 0 V
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
30
–30
V
Breakdown Voltage
23
–21
mV/
°
C
1
–1
μ
A
+100
+100
nA
On Characteristics
V
GS(th)
Gate Threshold Voltage
(Note 2)
V
DS
= V
GS
, I
D
= 250 μA
V
DS
= V
GS
, I
D
= –250 μA
I
D
= 250 μA, Referenced to 25
°
C
I
D
= –250 μA, Referenced to 25
°
C
V
GS
= 10 V, I
D
= 6 A
V
GS
= 10 V, I
D
= 6 A, T
J
= 125
°
C
V
GS
= 4.5 V, I
D
= 5 A
V
GS
= –10 V, I
D
= –6 A
V
GS
= –10 V, I
D
= –6 A, T
J
= 125
°
C
V
GS
= –4.5 V, I
D
= –5 A
V
GS
= 10 V, V
DS
= 5 V
V
GS
= –10 V, V
DS
= –5 V
Q1
Q2
Q1
Q2
Q1
1
–1
1.5
–1.7
–4
4
19
32
25
21
29
30
3
–3
V
V
GS(th)
T
J
R
DS(on)
Gate Threshold Voltage
Temperature Coefficient
Static Drain-Source
On-Resistance
mV/
°
C
28
48
35
32
51
45
Q2
m
I
D(on)
On-State Drain Current
Q1
Q2
Q1
Q2
20
–20
A
g
FS
Forward Transconductance V
DS
= 15 V, I
D
= 6 A
V
DS
= –10 V, I
D
= –6 A
18
16
S
Dynamic Characteristics
C
iss
Input Capacitance
Q1
Q2
Q1
Q2
Q1
Q2
830
1540
185
400
80
170
pF
C
oss
Output Capacitance
pF
C
rss
Reverse Transfer
Capacitance
Q1
V
= 15 V, V
GS
= 0 V,
f = 1.0 MHz
Q2
V
= –15 V, V
GS
= 0 V,
f = 1.0 MHz
pF
Electrical Characteristics
(continued)
T
A
= 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Type
Min
Typ
Max Units
Switching Characteristics
(Note 2)
t
d(on)
Turn-On Delay Time
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
6
13
10
22
18
47
5
18
9
15
2.8
4
3.1
5
12
24
18
35
29
75
12
30
13
20
ns
t
r
Turn-On Rise Time
ns
t
d(off)
Turn-Off Delay Time
ns
t
f
Turn-Off Fall Time
Q1
V
DS
= 15 V, I
D
= 1 A,
V
GS
= 10V, R
GEN
= 6
Q2
V
DS
= –15 V, I
D
= –1 A,
V
GS
= –10 V, R
GEN
= 6
ns
Q
g
Total Gate Charge
nC
Q
gs
Gate-Source Charge
nC
Q
gd
Gate-Drain Charge
Q1
V
DS
= 15 V, I
D
= 7.5 A, V
GS
= 5 V
Q2
V
DS
= –10 V, I
D
= –6 A, V
GS
= –5V
nC
S
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
SI4542DY 功能描述:MOSFET SO8 SINGLE NCH/PCH RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
SI4542DY 制造商:Vishay Siliconix 功能描述:MOSFET DUAL NP SO-8
SI4542DY-E3 功能描述:MOSFET 30V 6.9/6.1A 2W RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
SI4542DY-T1 功能描述:MOSFET 30V 6.9/6.1A 2W RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
SI4542DY-T1-E3 功能描述:MOSFET 30V 6.9/6.1A 2W RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
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