- 您現(xiàn)在的位置：買(mǎi)賣(mài)IC網(wǎng) > PDF目錄376353 > Si4532ADY (Microsemi Corporation) EVALUATION KIT PDF資料下載
參數(shù)資料
| 型號(hào)： | Si4532ADY |
| 廠商： | Microsemi Corporation |
| 英文描述： | EVALUATION KIT |
| 中文描述： | 評(píng)估板 |
| 文件頁(yè)數(shù)： | 15/18頁(yè) |
| 文件大?。?/td> | 339K |
| 代理商： | SI4532ADY |
第1頁(yè)第2頁(yè)第3頁(yè)第4頁(yè)第5頁(yè)第6頁(yè)第7頁(yè)第8頁(yè)第9頁(yè)第10頁(yè)第11頁(yè)第12頁(yè)第13頁(yè)第14頁(yè)當(dāng)前第15頁(yè)第16頁(yè)第17頁(yè)第18頁(yè)
LXE1710 E
VALUATION
B
OARD
PCB L
AYOUT
R
ECOMMENDATIONS
Like most analog circuits, component placement,
signal routing, and power/ground isolation can affect
the overall performance of the design. The layout
should utilize individual ground traces/planes for the
audio amplifier whenever possible. The audio input
and controller ground, FET ground, and output filter
ground are routed using a “star” connection in the
LXE1710 evaluation board. See PCB layer views.
The power to the controller IC should be routed using
separate traces that do not carry high current pulses
U
SER
G
UIDE
Microsemi
Linfinity Microelectronics Division
11861 Western Avenue, Garden Grove, CA. 92841, 714-898-8121, Fax: 714-893-2570
Page 15
Copyright
2000
Rev. 1.1, 2000-12-01
from the switching circuit. In general, minimizing the
high frequency, high power currents from flowing
through the same copper as the audio signal
references are recommended. Signal traces that
could be sensitive to noise should be node to node
connections (no “shared” traces). Stray capacitance at
the controller pins RPWM, EAOUT, EAIN, and FAOUT
can affect the circuit performance and components
associated with these pins should be placed as close
to the controller IC as possible.
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| SI4532DY | Dual N- and P-Channel Enhancement Mode Field Effect Transistor |
| Si4826DY | N-Channel FET Synchronous Buck Regulator Controller for Low Output Voltages |
| Si4442DY | N-Channel FET Synchronous Buck Regulator Controller for Low Output Voltages |
| SIDC03D60C6 | Fast switching diode chip in EMCON 3 -Technology |
| SIDC03D60F6 | Fast switching diode chip in EMCON-Technology |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| SI4532ADY | 制造商:Vishay Siliconix 功能描述:MOSFET DUAL NP SO-8 |
| SI4532ADY-E3 | 功能描述:MOSFET 30V 4.9/3.9A 2W RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| SI4532ADY-E3 | 制造商:Vishay Siliconix 功能描述:MOSFET Transistor Transistor Polarity:NP |
| SI4532ADY-T1 | 功能描述:MOSFET 30V 4.9/3.9A 2W RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| SI4532ADYT1E3 | 制造商:Vishay Siliconix 功能描述: |
發(fā)布緊急采購(gòu)，3分鐘左右您將得到回復(fù)。