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參數(shù)資料
| 型號： | SI4493DY |
| 廠商： | Vishay Intertechnology,Inc. |
| 英文描述： | P-Channel 2.5-V (G-S) MOSFET |
| 中文描述： | P通道的2.5 V（GS）的MOSFET的 |
| 文件頁數(shù)： | 2/5頁 |
| 文件大小： | 44K |
| 代理商： | SI4493DY |
Si4493DY
Vishay Siliconix
New Product
www.vishay.com
2
Document Number: 72256
S-31420—Rev. A, 07-Jul-03
SPECIFICATIONS (T
J
= 25 C UNLESS OTHERWISE NOTED)
Parameter
Symbol
Test Condition
Min
Typ
Max
Unit
Static
Gate Threshold Voltage
V
GS(th)
V
DS
= V
GS
, I
D
= -250 A
-0.6
-1.4
V
Gate-Body Leakage
I
GSS
V
DS
= 0 V, V
GS
=
12
V
100
nA
Zero Gate Voltage Drain Current
I
DSS
V
DS
= -16 V, V
GS
= 0 V
-1
A
V
DS
= -16 V, V
GS
= 0 V, T
J
= 70 C
-10
On-State Drain Current
a
I
D(on)
V
DS
= -5 V, V
GS
= -4.5 V
-30
A
Drain Source On State Resistance
Drain-Source On-State Resistance
a
r
DS(on)
V
GS
= -4.5 V, I
D
= -14 A
0.0065
0.00775
V
GS
= -2.5 V, I
D
= -11 A
0.010
0.01225
Forward Transconductance
a
g
fs
V
DS
= -10
V, I
D
= -14 A
60
S
Diode Forward Voltage
a
V
SD
I
S
= -2.7 A, V
GS
= 0 V
-0.68
-1.1
V
Dynamic
b
Total Gate Charge
Q
g
65
110
Gate-Source Charge
Q
gs
V
DS
= -10 V,
V
GS
= -4.5 V, I
D
= -14 A
14.5
nC
Gate-Drain Charge
Q
gd
21
Turn-On Delay Time
t
d(on)
110
165
Rise Time
t
r
V
= -10 V, R
= 10
-1 A, V
GEN
= -4.5 V, R
G
= 6
150
225
ns
Turn-Off Delay Time
t
d(off)
I
D
220
330
Fall Time
t
f
140
210
Gate Resistance
R
g
3.8
Source-Drain Reverse Recovery Time
t
rr
I
F
= -2.7 A, di/dt = 100 A/ s
85
130
ns
Notes
a.
b.
Pulse test; pulse width
Guaranteed by design, not subject to production testing.
300 s, duty cycle
2%.
TYPICAL CHARACTERISTICS (25 C UNLESS NOTED)
0
10
20
30
40
50
0.0
0.4
0.8
1.2
1.6
2.0
2.4
0
10
20
30
40
50
0
1
2
3
4
5
V
GS
= 5 thru 2.5 V
T
C
= 125 C
-55 C
25 C
Output Characteristics
Transfer Characteristics
V
DS
- Drain-to-Source Voltage (V)
-
I
D
V
GS
- Gate-to-Source Voltage (V)
-
I
D
2 V
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相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| SI4493DY-T1-E3 | 功能描述:MOSFET 20V 14A 1.5W RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| SI4493DY-T1-GE3 | 功能描述:MOSFET 20V 14A 3.0W 7.75mohm @ 4.5V RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| SI4496DY | 制造商:VISHAY 制造商全稱:Vishay Siliconix 功能描述:R - C Thermal Model Parameters |
| SI4496DY-E3 | 制造商:Vishay Siliconix 功能描述:MOSFET Transistor Transistor Polarity:NP |
| SI4496DY-RC | 制造商:VISHAY 制造商全稱:Vishay Siliconix 功能描述:R - C Thermal Model Parameters |
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