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參數(shù)資料
| 型號： | SI4486EY-T1 |
| 廠商： | Vishay Intertechnology,Inc. |
| 元件分類： | MOSFETs |
| 英文描述： | 30V N-Channel PowerTrench MOSFET |
| 中文描述： | 30V的N溝道的PowerTrench MOSFET的 |
| 文件頁數(shù)： | 2/4頁 |
| 文件大?。?/td> | 47K |
| 代理商： | SI4486EY-T1 |
Si4486EY
Vishay Siliconix
www.vishay.com
2-2
Document Number: 71234
S-03951—Rev. B, 26-May-03
SPECIFICATIONS (T
J
= 25 C UNLESS OTHERWISE NOTED)
Parameter
Symbol
Test Condition
Min
Typ
Max
Unit
Static
Gate Threshold Voltage
V
GS(th)
V
DS
= V
GS
, I
D
= 250 A
2
V
Gate-Body Leakage
I
GSS
V
DS
= 0 V, V
GS
=
20 V
100
nA
Zero Gate Voltage Drain Current
I
DSS
V
DS
= 80 V, V
GS
= 0 V
1
A
V
DS
= 80 V, V
GS
= 0 V, T
J
= 85 C
20
On-State Drain Current
a
I
D(on)
V
DS
5 V, V
GS
= 10
V
40
A
Drain-Source On-State Resistance
a
r
DS(on)
V
GS
= 10
V, I
D
= 7.9 A
0.021
0.025
V
GS
= 6.0 V, I
D
= 7.5 A
0.023
0.028
Forward Transconductance
a
g
fs
V
DS
= 15 V, I
D
= 7.9 A
35
S
Diode Forward Voltage
a
V
SD
I
S
= 3.1 A, V
GS
= 0 V
0.8
1.2
V
Dynamic
b
Total Gate Charge
Q
g
36
44
Gate-Source Charge
Q
gs
V
DS
= 50 V,
V
GS
= 10 V, I
D
= 7.9 A
10
nC
Gate-Drain Charge
Q
gd
8.6
Gate Resistance
R
g
0.5
1.27
2.2
Turn-On Delay Time
t
d(on)
20
40
Rise Time
t
r
V
= 50 V, R
= 50
1 A, V
GEN
= 10 V, R
G
= 6
10
20
Turn-Off Delay Time
t
d(off)
I
D
46
90
ns
Fall Time
t
f
26
50
Source-Drain Reverse Recovery Time
t
rr
I
F
= 3.1 A, di/dt = 100 A/ s
50
80
Notes
a.
b.
Pulse test; pulse width
300 s, duty cycle
2%.
Guaranteed by design, not subject to production testing.
TYPICAL CHARACTERISTICS (25 C UNLESS NOTED)
0
8
16
24
32
40
0
1
2
3
4
5
6
0
8
16
24
32
40
0
1
2
3
4
5
V
GS
= 10 thru 6 V
T
C
= 150 C
-55 C
4 V
25 C
Output Characteristics
Transfer Characteristics
V
DS
- Drain-to-Source Voltage (V)
-
I
D
V
GS
- Gate-to-Source Voltage (V)
-
I
D
5 V
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