參數(shù)資料
型號: SI4480EY
廠商: Vishay Intertechnology,Inc.
英文描述: N-Channel 80-V (D-S) MOSFET
中文描述: N通道80 - V(下局副局長)MOSFET的
文件頁數(shù): 3/4頁
文件大?。?/td> 47K
代理商: SI4480EY
Si4480EY
Vishay Siliconix
Document Number: 71060
S-03951—Rev. B, 26-May-03
www.vishay.com
2-3
TYPICAL CHARACTERISTICS (25 C UNLESS NOTED)
0.00
0.01
0.02
0.03
0.04
0.05
0.06
4
5
6
7
8
9
10
On-Resistance vs. Gate-to-Source Voltage
-
r
)
V
GS
- Gate-to-Source Voltage (V)
I
D
= 6.0 A
0
2
4
6
8
10
0
6
12
18
24
30
0.00
0.01
0.02
0.03
0.04
0.05
0
10
20
30
40
0
500
1000
1500
2000
2500
0
10
20
30
40
50
60
Gate Charge
On-Resistance vs. Drain Current
-
V
Q
g
- Total Gate Charge (nC)
V
DS
- Drain-to-Source Voltage (V)
C
C
rss
C
oss
C
iss
V
DS
= 40 V
I
D
= 6.0 A
-
r
)
I
D
- Drain Current (A)
Capacitance
V
GS
= 10 V
V
GS
= 6 V
0.0
0.2
0.4
0.6
0.8
1.0
1.2
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
2.2
2.4
-50
-25
0
25
50
75
100
125
150
175
V
GS
= 10 V
I
D
On-Resistance vs. Junction Temperature
T
J
- Junction Temperature ( C)
(
-
r
D
)
T
J
= 175 C
T
J
= 25 C
40
10
1
Source-Drain Diode Forward Voltage
V
SD
- Source-to-Drain Voltage (V)
-
I
S
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
SI4480EY/ 制造商:Vishay Siliconix 功能描述:MOSFET N SO-8
SI4480EY-E3 功能描述:MOSFET 80V 6A 2.5W RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS(導(dǎo)通):0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
SI4480EY-T1 制造商:VISHAY 制造商全稱:Vishay Siliconix 功能描述:N-Channel 80-V (D-S) MOSFET
SI4480EY-T1-E3 功能描述:MOSFET 80 Volt 6.0 Amp 2.5W RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS(導(dǎo)通):0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
SI4482 制造商:Vishay Siliconix 功能描述: