參數(shù)資料
型號(hào)： SI4480EY-T1
廠商： Vishay Intertechnology,Inc.
英文描述： N-Channel 80-V (D-S) MOSFET
中文描述： N通道80 - V（下局副局長(zhǎng)）MOSFET的
文件頁(yè)數(shù)： 2/4頁(yè)
文件大?。?/td> 47K
代理商： SI4480EY-T1
Si4480EY
Vishay Siliconix
www.vishay.com
2-2
Document Number: 71060
S-03951—Rev. B, 26-May-03
SPECIFICATIONS (T
J
= 25 C UNLESS OTHERWISE NOTED)
Parameter
Symbol
Test Condition
Min
Typ
b
Max
Unit
Static
Gate Threshold Voltage
V
GS(th)
V
DS
= V
GS
, I
D
= 250 A
2
V
Gate-Body Leakage
I
GSS
V
DS
= 0 V, V
GS
=
20 V
100
nA
Zero Gate Voltage Drain Current
I
DSS
V
DS
= 80 V, V
GS
= 0 V
1
A
V
DS
= 80 V, V
GS
= 0 V, T
J
= 55 C
20
On-State Drain Curren
a
I
D(on)
V
DS
= 5 V, V
GS
= 10 V
20
A
Drain Source On State Resistance
Drain-Source On-State Resistance
a
r
DS(on)
V
GS
= 10 V, I
D
= 6.2 A
0.026
0.035
V
GS
= 6.0 V, I
D
= 5.8 A
0.030
0.040
Forward Transconductance
a
g
fs
V
DS
= 15 V, I
D
= 6.2 A
25
S
Diode Forward Voltage
a
V
SD
I
S
= 2.1 A, V
GS
= 0 V
1.2
V
Dynamic
b
Total Gate Charge
Q
g
30
50
Gate-Source Charge
Q
gs
V
DS
= 40 V,
V
GS
= 10 V, I
D
= 6.2 A
9
nC
Gate-Drain Charge
Q
gd
5.6
Gate Resistance
R
g
1.5
4.0
Turn-On Delay Time
t
d(on)
12.5
25
Rise Time
t
r
V
= 40 V, R
= 30
1 A, V
GEN
= 10 V, R
G
= 6
12.5
25
Turn-Off Delay Time
t
d(off)
I
D
52
80
ns
Fall Time
t
f
22
40
Source-Drain Reverse Recovery Time
t
rr
I
F
= 2.1 A, di/dt = 100 A/ s
50
80
Notes
a.
b.
For design aid only; not subject to production testing.
Pulse test; pulse width
300 s, duty cycle
2%.
TYPICAL CHARACTERISTICS (25 C UNLESS NOTED)
0
8
16
24
32
40
0.0
0.8
1.6
2.4
3.2
4.0
0
8
16
24
32
40
0
1
2
3
4
5
6
Output Characteristics
Transfer Characteristics
V
DS
- Drain-to-Source Voltage (V)
-
I
V
GS
= 10 thru 6 V
5 V
4 V
V
GS
- Gate-to-Source Voltage (V)
-
I
T
C
= 125 C
-55 C
25 C
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