參數(shù)資料
型號(hào)： SI4480DY
廠商： FAIRCHILD SEMICONDUCTOR CORP
元件分類： 小信號(hào)晶體管
英文描述： 80V N-Channel PowerTrench MOSFET
中文描述： 7600 mA, 80 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET
封裝： SO-8
文件頁(yè)數(shù)： 2/5頁(yè)
文件大?。?/td> 93K
代理商： SI4480DY
Si4480DY
Rev
A
Electrical Characteristics
T
A
= 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Min
Typ
Max Units
Drain-Source Avalanche Ratings
(Note 2)
W
DSS
Single Pulse Drain-Source
Avalanche Energy
I
AR
Maximum Drain-Source Avalanche Current
V
DD
= 40 V, I
D
= 7.6 A
245
mJ
7.6
A
Off Characteristics
BV
DSS
BV
DSS
T
J
I
DSS
I
GSSF
I
GSSR
Drain-Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current
Gate-Body Leakage, Forward
Gate-Body Leakage, Reverse
V
GS
= 0 V, I
D
= 250
μ
A
I
D
= 250
μ
A, Referenced to 25
°
C
80
V
81
mV/
°
C
V
DS
= 64 V, V
GS
= 0 V
V
GS
= 20 V, V
DS
= 0 V
V
GS
= -20 V, V
DS
= 0 V
1
μ
A
nA
nA
100
-100
On Characteristics
(Note 2)
V
GS(th)
Gate Threshold Voltage
V
GS(th)
T
J
Temperature Coefficient
R
DS(on)
Static Drain-Source
On-Resistance
V
DS
= V
GS
, I
D
= 250
μ
A
I
D
= 250
μ
A, Referenced to 25
°
C
2
2.5
-7
4
V
Gate Threshold Voltage
mV/
°
C
V
GS
= 10 V, I
D
= 7.6 A
V
GS
= 10 V, I
D
= 7.6 A, T
J
=125
°
C
V
GS
= 6 V, I
D
= 7 A
V
GS
= 10 V, V
DS
= 5 V
V
DS
= 5 V, I
D
= 7.6 A
0.022
0.037
0.024
0.029
0.055
0.033
I
D(on)
g
FS
On-State Drain Current
Forward Transconductance
30
A
S
28
Dynamic Characteristics
C
iss
Input Capacitance
C
oss
Output Capacitance
C
rss
Reverse Transfer Capacitance
1800
180
90
pF
pF
pF
V
DS
= 25 V, V
GS
= 0 V,
f = 1.0 MHz
Switching Characteristics
(Note 2)
t
d(on)
Turn-On Delay Time
t
r
Turn-On Rise Time
t
d(off)
Turn-Off Delay Time
t
f
Turn-Off Fall Time
Q
g
Total Gate Charge
Q
gs
Gate-Source Charge
Q
gd
Gate-Drain Charge
13
8
34
16
34
6.1
6.9
26
20
60
30
46
ns
ns
ns
ns
nC
nC
nC
V
DD
= 40 V, I
D
= 1 A,
V
GS
= 10 V, R
GEN
= 6
V
DS
= 40 V, I
D
= 7.6 A,
V
GS
= 10 V
Drain-Source Diode Characteristics and Maximum Ratings
I
S
Maximum Continuous Drain-Source Diode Forward Current
V
SD
Drain-Source Diode Forward Voltage
2.1
1.2
A
V
V
GS
= 0 V, I
S
= 2.1 A
(Note 2)
0.74
Notes:
1:
R
θ
JA
is the sum of the junction-to-case and case-to-ambient resistance where the case thermal reference is defined as the solder mounting surface of the
drain pins. R
θ
JC
is guaranteed by design while R
θ
CA
is determined by the user's board design.
Scale 1 : 1 on letter size paper
2:
Pulse Test: Pulse Width
≤
300
μ
s, Duty Cycle
≤
2.0%
a) 50
°
C/W when
mounted on a 1 in
2
pad of 2 oz. copper.
b) 105
°
C/W when
mounted on a 0.04 in
2
pad of 2 oz. copper.
c) 125
°
C/W when
mounted on a minimum
pad.
S
4
D
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
SI4480DY-E3 功能描述:MOSFET 80V 6A 2.5W RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
SI4480DY-T1 功能描述:MOSFET 80V 6A 2.5W RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
SI4480DY-T1-E3 功能描述:MOSFET 80V 6A 2.5W RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
SI4480DY-T1-E3 制造商:Vishay Siliconix 功能描述:MOSFET
SI4480DY-T1-GE3 功能描述:MOSFET 80V 6.0A 2.5W 35mohm @ 10V RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
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