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參數(shù)資料
| 型號(hào)： | SI4466 |
| 廠商： | Fairchild Semiconductor Corporation |
| 英文描述： | Single N-Channel 2.5V Specified PowerTrench MOSFET |
| 中文描述： | 單個(gè)N -溝道MOSFET的為2.5V指定的PowerTrench |
| 文件頁數(shù)： | 2/5頁 |
| 文件大?。?/td> | 80K |
| 代理商： | SI4466 |
Si4466DY Rev. A
Notes:
1.
R
θ
JA
is the sum of the junction-to-case and case-to-ambient resistance where the case thermal reference is defined as the solder mounting surface of the
drain pins. R
θ
JC
is guaranteed by design while R
θ
JA
is determined by the user's board design.
Scale 1 : 1 on letter size paper
2.
Pulse Test: Pulse Width
≤
300
μ
s, Duty Cycle
≤
2.0%
a) 50
°
C/W when
mounted on a 0.5 in
2
pad of 2 oz. copper.
b) 105
°
C/W when
mounted on a 0.02 in
2
pad of 2 oz. copper.
c) 125
°
C/W when
mounted on a 0.003 in
2
pad of 2 oz. copper.
Electrical Characteristics
T
A
= 25
°
C unless otherwise noted
Symbol
Parameter
Test Conditions
Min
Typ
Max
Units
Off Characteristics
BV
DSS
Drain-Source Breakdown Voltage
BV
DSS
T
J
Coefficient
I
DSS
Zero Gate Voltage Drain Current
V
GS
= 0 V, I
D
= 250
μ
A
I
D
= 250
μ
A, Referenced to 25
°
C
20
V
Breakdown Voltage Temperature
29
mV/
°
C
V
DS
= 16 V, V
GS
= 0 V
1
μ
A
On Characteristics
(Note 2)
V
GS(th)
Gate Threshold Voltage
V
GS(th)
T
J
Temperature Coefficient
R
DS(on)
Static Drain-Source
On-Resistance
V
DS
= V
GS
, I
D
= 250
μ
A
I
D
= 250
μ
A, Referenced to 25
°
C
0.4
0.9
-4
1.5
V
Gate Threshold Voltage
mV/
°
C
V
GS
= 4.5 V, I
D
=15 A
V
GS
= 4.5 V, I
D
=15 A,
T
J
=125
°
C
V
GS
= 2.5 V, I
D
=12 A
V
GS
= 4.5 V, V
DS
= 5.0 V
V
DS
= 5 V, I
D
= 15 A
0.006
0.009
0.008
0.0075
0.0130
0.0100
I
D(on)
g
FS
On-State Drain Current
Forward Transconductance
25
A
S
70
Dynamic Characteristics
C
iss
Input Capacitance
C
oss
Output Capacitance
C
rss
Reverse Transfer Capacitance
4700
850
310
pF
pF
pF
V
DS
= 10 V, V
GS
= 0 V,
f = 1.0 MHz
Switching Characteristics
(Note 2)
t
d(on)
Turn-On Delay Time
t
r
Turn-On Rise Time
t
d(off)
Turn-Off Delay Time
t
f
Turn-Off Fall Time
Q
g
Total Gate Charge
Q
gs
Gate-Source Charge
Q
gd
Gate-Drain Charge
20
27
95
35
47
7
10.5
32
44
133
56
66
ns
ns
ns
ns
nC
nC
nC
V
DD
= 10 V, I
D
= 1 A,
V
GS
= 4.5 V, R
GEN
= 6
V
DS
= 10 V, I
D
= 15 A,
V
GS
= 5 V,
Drain-Source Diode Characteristics and Maximum Ratings
I
S
Maximum Continuous Drain-Source Diode Forward Current
V
SD
Drain-Source Diode Forward Voltage
2.1
1.2
A
V
V
GS
= 0 V, I
S
= 2.1 A
(Note 2)
0.65
I
GSSR
Gate–Body Leakage, Reverse
V
GS
= –12 V,
V
DS
= 0 V
–100
nA
I
GSSF
Gate–Body Leakage, Forward
V
GS
= 12 V, V
DS
= 0 V
100
nA
S
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