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參數(shù)資料
| 型號(hào)： | SI4346DY |
| 廠(chǎng)商： | Vishay Intertechnology,Inc. |
| 元件分類(lèi)： | MOSFETs |
| 英文描述： | Dual N-Channel 30-V (D-S) MOSFET with Schottky Diode |
| 中文描述： | 雙N溝道30 V的（副）MOSFET的肖特基二極管 |
| 文件頁(yè)數(shù)： | 2/6頁(yè) |
| 文件大?。?/td> | 86K |
| 代理商： | SI4346DY |
Si4346DY
Vishay Siliconix
New Product
www.vishay.com
2
Document Number: 72958
S-41793—Rev. B, 04-Oct-04
SPECIFICATIONS (T
J
= 25 C UNLESS OTHERWISE NOTED)
Parameter
Symbol
Test Condition
Min
Typ
Max
Unit
Static
Gate Threshold Voltage
V
GS(th)
V
DS
= V
GS
, I
D
= 250 A
V
DS
= 0 V, V
GS
=
V
DS
= 30 V, V
GS
= 0 V
V
DS
= 30 V, V
GS
= 0 V, T
J
= 55 C
5 V, V
GS
= 10
V
V
GS
= 10
V, I
D
= 8 A
V
GS
= 4.5 V, I
D
= 7.5 A
V
GS
= 3.0 V, I
D
= 6.8 A
V
GS
= 2.5 V, I
D
= 6.0 A
V
DS
= 15 V, I
D
= 8 A
I
S
= 2.2 A, V
GS
= 0 V
0.7
2.0
V
Gate-Body Leakage
I
GSS
12 V
100
nA
Zero Gate Voltage Drain Current
I
DSS
1
5
A
On-State Drain Current
a
I
D(on)
V
DS
20
A
0.019
0.023
Drain-Source On-State Resistance
a
r
DS(on)
0.021
0.023
0.027
32
0.75
0.025
0.030
0.036
Forward Transconductance
a
Diode Forward Voltage
a
g
fs
V
SD
S
V
1.1
Dynamic
b
Total Gate Charge
Q
g
Q
gs
Q
gd
R
g
t
d(on)
t
r
t
d(off)
t
f
t
rr
6.5
10
Gate-Source Charge
Gate-Drain Charge
V
= 15 V,
V
= 4.5 V, I
= 8 A
DS
GS
2.3
1.1
nC
D
Gate Resistance
0.25
0.5
0.75
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Source-Drain Reverse Recovery Time
9
11
40
7
20
15
17
60
11
35
V
= 15 V, R
= 15
1 A, V
GEN
= 10 V, R
= 6
I
D
ns
g
I
F
= 2.2 A, di/dt = 100 A/ s
Notes
a.
b.
Pulse test; pulse width
300 s, duty cycle
2%.
Guaranteed by design, not subject to production testing.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
TYPICAL CHARACTERISTICS (25 C UNLESS NOTED)
0
5
10
15
20
25
30
0.0
0.5
1.0
1.5
2.0
2.5
3.0
0
5
10
15
20
25
30
0
1
2
3
4
5
V
GS
= 10 thru 3 V
T
C
= 125 C
55 C
25 C
Output Characteristics
Transfer Characteristics
V
DS
Drain-to-Source Voltage (V)
I
D
V
GS
Gate-to-Source Voltage (V)
I
D
2 V
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| SI4346DY-T1-E3 | Dual N-Channel 30-V (D-S) MOSFET with Schottky Diode |
| SI4346DY-E3 | Dual N-Channel 30-V (D-S) MOSFET with Schottky Diode |
| Si4362DY-T1 | Paired Cable; Number of Conductors:6; Conductor Size AWG:22; No. Strands x Strand Size:Solid; Jacket Material:Polyvinylchloride (PVC); Number of Pairs:3; Leaded Process Compatible:Yes; Voltage Nom.:300V RoHS Compliant: Yes |
| Si4362DY-T1E3 | Dual N-Channel 30-V (D-S) MOSFET with Schottky Diode |
| SI4362DY | Dual N-Channel 30-V (D-S) MOSFET with Schottky Diode |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| SI4346DY-E3 | 制造商:VISHAY 制造商全稱(chēng):Vishay Siliconix 功能描述:N-Channel 30-V (D-S) MOSFET |
| SI4346DY-T1-E3 | 功能描述:MOSFET 30V 8.0A 2.5W 23mohm @ 10V RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| SI4346DY-T1-E3 | 制造商:Vishay Siliconix 功能描述:N CHANNEL MOSFET 30V 8A SOIC |
| SI4346DY-T1-GE3 | 功能描述:MOSFET 30V 8.0A 2.5W 23mohm @ 10V RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| SI4348DY | 制造商:VISHAY 制造商全稱(chēng):Vishay Siliconix 功能描述:N-Channel 30-V (D-S) MOSFET |
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