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參數(shù)資料
| 型號： | SI4308DY |
| 廠商： | Vishay Intertechnology,Inc. |
| 元件分類： | MOSFETs |
| 英文描述： | Dual N-Channel 30-V (D-S) MOSFET with Schottky Diode |
| 中文描述： | 雙N溝道30 V的（副）MOSFET的肖特基二極管 |
| 文件頁數(shù)： | 1/8頁 |
| 文件大小： | 79K |
| 代理商： | SI4308DY |
FEATURES
TrenchFET Power MOSFET
APPLICATIONS
DC-DC Converters
- Game Stations
- Video Graphics
Si4308DY
Vishay Siliconix
New Product
Document Number: 71941
S-21646—Rev. B, 23-Sep-02
www.vishay.com
1
Dual N-Channel 30-V (D-S) MOSFET with Schottky Diode
PRODUCT SUMMARY
V
DS
(V)
r
DS(on)
( )
I
D
(A)
0.012 @ V
GS
= 10 V
0.018 @ V
GS
= 4.5 V
0.010 @ V
GS
= 10 V
0.0110 @ V
GS
= 4.5 V
9.6
Channel-1
7.8
30
13.5
Channel-2
12.8
SCHOTTKY PRODUCT SUMMARY
V
DS
(V)
V
SD
(V)
Diode Forward Voltage
I
F
(A)
30
0.53 V @ 3 A
2.0
D
1
S
1
D
1
S
1
G
1
D
2
G
2
D
2
SO-14
11
12
13
14
Top View
2
3
4
1
G
2
S
2
G
1
S
1
D
1
D
2
N-Channel 2
MOSFET
N-Channel 1
MOSFET
Schottky Diode
S
2
D
2
S
2
D
2
S
2
D
2
8
9
10
5
6
7
ABSOLUTE MAXIMUM RATINGS (T
A
= 25 C UNLESS OTHERWISE NOTED)
Channel-1
Channel-2
Parameter
Symbol
10 secs
Steady State
10 secs
Steady State
Unit
Drain-Source Voltage
V
DS
V
GS
30
Gate-Source Voltage
20
12
V
T
A
= 25 C
T
A
= 70 C
9.6
7.3
13.5
9.9
Continuous Drain Current
(T
J
= 150 C)
a
I
D
7.7
5.8
10.8
7.6
Pulsed Drain Current
I
DM
I
S
40
50
A
Continuous Source Current (Diode Conduction)
a
1.8
1.04
2.73
1.33
T
A
= 25 C
T
A
= 70 C
2
1.14
3.0
1.47
Maximum Power Dissipation
a
P
D
1.28
0.73
1.9
0.94
W
Operating Junction and Storage Temperature Range
T
J
, T
stg
-55 to 150
C
THERMAL RESISTANCE RATINGS
Channel-1
Channel-2
Schottky
Parameter
Symbol
Typ
Max
Typ
Max
Typ
Max
Unit
t
10 sec
50
62.5
34
42
40
48
Maximum Junction-to-Ambient
a
Steady-State
R
thJA
90
110
70
85
76
93
C/W
Maximum Junction-to-Foot (Drain)
Steady-State
R
thJC
33
40
17
22
21
26
Notes
a.
Surface Mounted on 1” x 1” FR4 Board.
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| SI4310-A0-FT | 制造商:Silicon Laboratories Inc 功能描述: |
| SI4310BDY | 制造商:VISHAY 制造商全稱:Vishay Siliconix 功能描述:Dual N-Channel 30-V (D-S) MOSFET with Schottky Diode |
| SI4310BDY-E3 | 制造商:VISHAY 制造商全稱:Vishay Siliconix 功能描述:Dual N-Channel 30-V (D-S) MOSFET with Schottky Diode |
| SI4310BDY-T1-E3 | 功能描述:MOSFET 30V 10/14A 1.14/1.47 RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| SI4310BDY-T1-GE3 | 制造商:Vishay Semiconductors 功能描述:VISSI4310BDY-T1-GE3 DUAL N-CH 30-V (D-S) |
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