參數(shù)資料
型號(hào): SI4300DY
廠商: Vishay Intertechnology,Inc.
英文描述: N-Channel 30-V (D-S), Reduced Qg Fast Switching MOSFET with Schottky Diode
中文描述: N溝道30 V的(副),減少Q(mào)g和快速開關(guān)MOSFET和肖特基二極管
文件頁數(shù): 3/5頁
文件大小: 45K
代理商: SI4300DY
Si4300DY
Vishay Siliconix
Document Number: 71772
S-03951—Rev. B, 26-May-03
www.vishay.com
2-3
TYPICAL CHARACTERISTICS (25 C UNLESS NOTED)
MOSFET
0
8
16
24
32
40
0
1
2
3
4
5
-
r
D
)
0
200
400
600
800
1000
1200
0
5
10
15
20
25
30
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
-50
-25
0
25
50
75
100
125
150
0
8
16
24
32
40
0
2
4
6
8
10
0
2
4
6
8
10
0
3
6
9
12
15
0.00
0.03
0.06
0.09
0.12
0.15
0
8
16
24
32
40
V
GS
= 10 thru 5 V
T
C
= 125 C
-55 C
V
DS
- Drain-to-Source Voltage (V)
C
rss
C
oss
C
iss
V
DS
= 15 V
I
D
= 9 A
I
D
- Drain Current (A)
V
GS
= 10 V
I
D
V
GS
= 10 V
V
GS
= 4.5 V
3 V
25 C
4 V
Output Characteristics
Transfer Characteristics
Gate Charge
On-Resistance vs. Drain Current
V
DS
- Drain-to-Source Voltage (V)
-
I
D
V
GS
- Gate-to-Source Voltage (V)
-
I
D
-
Q
g
- Total Gate Charge (nC)
C
V
G
Capacitance
On-Resistance vs. Junction Temperature
T
J
- Junction Temperature ( C)
(
-
r
D
)
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