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Si4020
7
GENERAL DEVICE SPECIFICATIONS
All voltages are referenced to V
ss
, the potential on the ground reference pin VSS.
Absolute Maximum Ratings (non-operating)
Symbol
Parameter
Min
Max
Units
V
dd
Positive supply voltage
-0.5
6.0
V
V
in
Voltage on any pin except open collector outputs
-0.5
V
dd
+0.5
V
V
oc
Voltage on open collector outputs
-0.5
6.0
V
I
in
Input current into any pin except VDD and VSS
-25
25
mA
ESD
Electrostatic discharge with human body model
1000
V
T
st
Storage temperature
-55
125
篊
T
ld
Lead temperature (soldering, max 10 s)
260
篊
Recommended Operating Range
Symbol
Parameter
Min
Max
Units
V
dd
Positive supply voltage
2.2
5.4
V
V
oc
Voltage on open collector outputs (Max 6.0 V)
V
dd
- 1
V
dd
+ 1
V
T
op
Ambient operating temperature
-40
85
篊
ELECTRICAL SPECIFICATION
(Min/max values are valid over the whole recommended operating range, typical conditions: Top
= 27
o
C; Vdd = Voc = 2.7 V)
DC Characteristics
Symbol
Parameter
Conditions/Notes
Min
Typ
Max
Units
315 MHz band
9
433 MHz band
10
868 MHz band
12
I
dd_TX_0
Supply current
(TX mode, P
out
= 0 dBm)
915 MHz band
13
mA
315 MHz band
11
433 MHz band
12
868 MHz band
14
I
dd_TX_PMAX
Supply current
(TX mode, P
out
= P
max
)
915 MHz band
15
mA
I
pd
Standby current in sleep mode
All blocks disabled (Note 1)
0.3
礎(chǔ)
I
w
t
Wake-up timer current consumption
1.5
礎(chǔ)
I
lb
Low battery detector current
consumption
0.5
礎(chǔ)
I
x
Idle current
Only crystal oscillator is on
1.5
mA
V
lba
Low battery detection accuracy
75
mV
V
lb
Low battery detector threshold
Programmable in 0.1 V steps
2.2
5.3
V
V
il
Digital input low level
0.3*V
dd
V
V
ih
Digital input high level
0.7*V
dd
V
I
il
Digital input current
V
il
= 0 V
-1
1
礎(chǔ)
I
ih
Digital input current
V
ih
= V
dd
, V
dd
= 5.4 V
-1
1
礎(chǔ)
V
ol
Digital output low level
I
ol
= 2 mA
0.4
V
V
oh
Digital output high level
I
oh
= -2 mA
V
dd
-0.4
V
Note for table above is on page 7.
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