參數(shù)資料
型號(hào): SI3948
廠商: Fairchild Semiconductor Corporation
英文描述: Dual N-Channel Logic Level PowerTrench MOSFET
中文描述: 雙N溝道MOSFET的邏輯電平的PowerTrench
文件頁(yè)數(shù): 4/5頁(yè)
文件大小: 95K
代理商: SI3948
SI3948DV Rev.A
Figure 10. Single Pulse Maximum Power
Dissipation.
0.1
0.5
1
2
5
10
30
10
20
50
100
200
500
V , DRAIN TO SOURCE VOLTAGE (V)
C
C ss
f = 1 MHz
V = 0V
C ss
C ss
Figure 8. Capacitance Characteristics
.
Figure 7. Gate Charge Characteristics.
Figure 9. Maximum Safe Operating Area.
Typical Electrical Characteristics
(continued)
0
1
2
3
4
0
2
4
6
8
10
Q , GATE CHARGE (nC)
V
G
I = 2.5A
10V
15V
V = 5V
0.1
0.3
1
3
10
30
50
0.01
0.03
0.1
0.3
1
3
10
30
V , DRAIN-SOURCE VOLTAGE (V)
I
D
RDS(ON)LMT
V = 10V
SINGLE PULSE
R =180°C/W
T = 25°C
DC
1s
10ms
100ms
1ms
100us
0.01
0.1
1
10
100
300
0
1
2
3
4
5
SINGLE PULSE TIME (SEC)
P
SINGLE PULSE
R =180°C/W
T = 25°C
Figure 11. Transient Thermal Response Curve.
Thermal characterization performed using the conditions described in Note 1c.
Transient thermal response will change depending on the circuit board design.
0.0001
0.001
0.01
0.1
t , TIME (sec)
1
10
100
300
0.01
0.02
0.05
0.1
0.2
0.5
1
T
Single Pulse
D = 0.5
0.1
0.05
0.02
0.01
0.2
r
Duty Cycle, D = t / t
2
T - T = P * R JA
P(pk)
t
1
t
2
R (t) = r(t) * R
R =
180
°C/W
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