參數(shù)資料
型號: SI3483DV
廠商: Vishay Intertechnology,Inc.
英文描述: P-Channel 30-V (D-S) MOSFET to switch white LED's;
中文描述: P通道30V(D-S)MOSFET用于開關(guān)白光LED
文件頁數(shù): 3/5頁
文件大?。?/td> 66K
代理商: SI3483DV
Si3483DV
Vishay Siliconix
Document Number: 72078
S-40238—Rev. B, 16-Feb-04
www.vishay.com
3
TYPICAL CHARACTERISTICS (25 C UNLESS NOTED)
r
D
)
0
200
400
600
800
1000
1200
1400
1600
0
6
12
18
24
30
0.6
0.8
1.0
1.2
1.4
1.6
50
25
0
25
50
75
100
125
150
0
2
4
6
8
10
0
5
10
15
20
25
0.00
0.02
0.04
0.06
0.08
0.10
0
5
10
15
20
25
V
DS
Drain-to-Source Voltage (V)
C
rss
C
oss
C
iss
V
DS
= 15 V
I
D
= 6.2 A
I
D
Drain Current (A)
V
GS
= 10 V
I
D
V
GS
= 10 V
Gate Charge
On-Resistance vs. Drain Current
Q
g
Total Gate Charge (nC)
C
V
G
Capacitance
On-Resistance vs. Junction Temperature
T
J
Junction Temperature ( C)
(
r
D
)
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
0.00
0.02
0.04
0.06
0.08
0.10
0
2
4
6
8
10
T
J
= 150 C
I
D
= 6.2 A
30
10
1
Source-Drain Diode Forward Voltage
On-Resistance vs. Gate-to-Source Voltage
r
D
)
V
SD
Source-to-Drain Voltage (V)
V
GS
Gate-to-Source Voltage (V)
I
S
V
GS
= 4.5 V
T
J
= 25 C
I
D
= 2 A
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相關(guān)代理商/技術(shù)參數(shù)
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SI3483DV-T1-GE3 功能描述:MOSFET 30V 6.2A 2.0W 35mohm @ 10V RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS(導(dǎo)通):0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
SI3493BDV 制造商:VISHAY 制造商全稱:Vishay Siliconix 功能描述:P-Channel 20-V (D-S) MOSFET
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