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參數資料
| 型號： | SI3467DV |
| 廠商： | Vishay Intertechnology,Inc. |
| 元件分類： | MOSFETs |
| 英文描述： | P-Channel 20-V (D-S) MOSFET, Low-Threshold |
| 中文描述： | P通道20 - V（下局副局長）MOSFET的低閾值 |
| 文件頁數： | 1/5頁 |
| 文件大?。?/td> | 72K |
| 代理商： | SI3467DV |
FEATURES
TrenchFET Power MOSFET
APPLICATIONS
Load Switch
PC
Game Machine
Si3467DV
Vishay Siliconix
New Product
Document Number: 72658
S-40238—Rev. B, 16-Feb-04
www.vishay.com
1
P-Channel 20-V (D-S) MOSFET
PRODUCT SUMMARY
V
DS
(V)
r
DS(on)
( )
I
D
(A)
20
0.054 @ V
GS
=
10 V
5.0
0.094 @ V
GS
=
4.5 V
3.8
(1, 2, 5, 6) D
(4) S
(3) G
P-Channel MOSFET
TSOP-6
Top View
6
4
1
2
3
5
2.85 mm
3 mm
Ordering Information: Si3467DV-T1—E3 (lLead Free)
Marking Code:
7Cxxx
ABSOLUTE MAXIMUM RATINGS (T
A
= 25 C UNLESS OTHERWISE NOTED)
Parameter
Symbol
5 secs
Steady State
Unit
Drain-Source Voltage
V
DS
20
V
Gate-Source Voltage
V
GS
20
Continuous Drain Current
(T
J
= 150 C)
a
T
A
= 25 C
I
D
5.0
3.8
T
A
= 70 C
3.9
3.0
A
Pulsed Drain Current
I
DM
25
Continuous Source Current (Diode Conduction)
a
I
S
1.7
0.95
Maximum Power Dissipation
a
T
A
= 25 C
P
D
2.0
1.14
W
T
A
= 70 C
1.3
0.73
Operating Junction and Storage Temperature Range
T
J
, T
stg
55 to 150
C
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Typical
Maximum
Unit
Maximum Junction-to-Ambient
t A bi
a
t
5 sec
R
thJA
50
62.5
Steady State
90
110
C/W
Maximum Junction-to-Foot (Drain)
Steady State
R
thJF
30
36
Notes
a.
Surface Mounted on 1” x 1” FR4 Board.
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| Si3467DV-T1-E3 | P-Channel 20-V (D-S) MOSFET, Low-Threshold |
| SI3469DV | P-Channel 20-V (D-S) MOSFET, Low-Threshold |
| SI3469DV-T1-E3 | P-Channel 20-V (D-S) MOSFET, Low-Threshold |
| SI3473DV | P-Channel 12-V (D-S) MOSFET |
| SI3481DV | P-Channel 30-V (D-S) MOSFET |
相關代理商/技術參數 |
參數描述 |
|---|---|
| SI3467DV_08 | 制造商:VISHAY 制造商全稱:Vishay Siliconix 功能描述:P-Channel 20-V (D-S) MOSFET |
| SI3467DV-T1-E3 | 功能描述:MOSFET 20V 5.0A 2.0W 54 mohms @ 10V RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| SI3467DV-T1-GE3 | 功能描述:MOSFET 20V 5.0A 2.0W 54mohm @ 10V RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| SI3469DV | 制造商:VISHAY 制造商全稱:Vishay Siliconix 功能描述:P-Channel 20-V (D-S) MOSFET |
| SI3469DV_08 | 制造商:VISHAY 制造商全稱:Vishay Siliconix 功能描述:P-Channel 20-V (D-S) MOSFET |
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