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參數(shù)資料
| 型號(hào)： | SI3446DV |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | 小信號(hào)晶體管 |
| 英文描述： | Single N-Channel, 2.5V Specified PowerTrench MOSFET |
| 中文描述： | 6200 mA, 20 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| 封裝： | SUPERSOT-6 |
| 文件頁(yè)數(shù)： | 4/5頁(yè) |
| 文件大小： | 93K |
| 代理商： | SI3446DV |
FDC637AN
SI3446DV
Rev.
A1
Typical Characteristics
(continued)
Figure 7. Gate-Charge Characteristics
Figure 8. Capacitance Characteristics
Figure 9. Maximum Safe Operating Area
Figure 10. Single Pulse Maximum
Power Dissipation
Figure 11. Transient Thermal Response Curve.
Thermal characterization performed using the conditions described in Note 1b.
Transient themal response will change depending on the circuit board design.
0.00001
0.0001
0.001
0.01
0.1
1
10
100
300
0.005
0.01
0.02
0.05
0.1
0.2
0.5
1
t , TIME (sec)
T
r
Single Pulse
D = 0.5
0.1
0.05
0.02
0.01
0.2
Duty Cycle, D = t / t
1
2
R (t) = r(t) * R
R = 156
°
C/W
T - T = P * R (t)
P(pk)
t
1
t
2
0
300
600
900
1200
1500
1800
0
5
10
15
20
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
C
C
iss
C
oss
C
rss
f = 1MHz
V
GS
= 0V
0
1
2
3
4
5
0.1
1
10
100
1000
SINGLE PULSE TIME (SEC)
P
SINGLE PULSE
R
θ
JA
= 156
o
C/W
T
A
= 25
o
C
0.01
0.1
1
10
100
0.1
1
10
100
V
DS
, DRAIN-SOURCE VOLTAGE (V)
I
D
,
DC
1s
100ms
10ms
1ms
100
μ
s
V
GS
= 4.5V
SINGLE PULSE
R
θ
JA
= 156
o
C/W
T
A
= 25
o
C
R
DS(ON)
LIMIT
0
1
2
3
4
5
0
2
4
6
8
10
12
14
Q
g
, GATE CHARGE (nC)
V
G
,
I
D
= 6.2A
V
DS
= 5V
10V
15V
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| SI3446DV-T1 | 功能描述:MOSFET 20V 5.3A 2W RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| SI3446DV-T1-E3 | 功能描述:MOSFET 20V 5.3A 2W RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| SI3446DV-T3 | 制造商:Vishay Semiconductors 功能描述: |
| SI3447 | 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:P-Channel 1.8V Specified PowerTrench MOSFET |
| SI3447BDV | 制造商:VISHAY 制造商全稱:Vishay Siliconix 功能描述:P-Channel 12-V (D-S) MOSFET |
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