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參數資料
| 型號： | SI3442DV |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | 小信號晶體管 |
| 英文描述： | N-Channel Logic Level Enhancement Mode Field Effect Transistor |
| 中文描述： | 4100 mA, 20 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| 封裝： | SUPERSOT-6 |
| 文件頁數： | 1/4頁 |
| 文件大小： | 61K |
| 代理商： | SI3442DV |
Si3442BDV
Vishay Siliconix
Document Number: 72504
S-40424—Rev. C, 15-Mar-04
www.vishay.com
1
N-Channel 2.5-V (G-S) MOSFET
PRODUCT SUMMARY
V
DS
(V)
r
DS(on)
( )
I
D
(A)
20
0.057 @ V
GS
= 4.5 V
4.2
0.090 @ V
GS
= 2.5 V
3.4
(1, 2, 5, 6) D
(3) G
(4) S
N-Channel MOSFET
TSOP-6
Top View
6
4
1
2
3
5
2.85 mm
3 mm
Ordering Information:
Si3442BDV-T1—E3
Marking Code:
2Bxxx
ABSOLUTE MAXIMUM RATINGS (T
A
= 25 C UNLESS OTHERWISE NOTED)
Parameter
Symbol
5 secs
Steady State
Unit
Drain-Source Voltage
V
DS
20
V
Gate-Source Voltage
V
GS
12
Continuous Drain Current
(T
J
= 150 C)
a
T
A
= 25 C
I
D
4.2
3.0
T
A
= 70 C
3.4
2.4
A
Pulsed Drain Current
I
DM
20
Continuous Source Current (Diode Conduction)
a
I
S
1.4
0.72
Maximum Power Dissipation
a
T
A
= 25 C
P
D
1.67
0.86
W
T
A
= 70 C
1.07
0.55
Operating Junction and Storage Temperature Range
T
J
, T
stg
55 to 150
C
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Typical
Maximum
Unit
Maximum Junction-to-Ambient
t A bi
a
t
5 sec
R
thJA
75
100
Steady State
120
145
C/W
Maximum Junction-to-Foot (Drain)
Steady State
R
thJF
70
85
Notes
a.
For SPICE model information via the Worldwide Web: http://www.vishay.com/www/product/spice.htm
Surface Mounted on FR4 Board, t
5 sec.
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相關代理商/技術參數 |
參數描述 |
|---|---|
| SI3442DV-T1 | 功能描述:MOSFET 20V 4.0A 2W RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| SI3443BDVT1 | 制造商:VISHAY 功能描述:New |
| SI3443BDV-T1-E3 | 功能描述:MOSFET 20V 4.4A 2W RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| SI3443BDV-T1-GE3 | 功能描述:MOSFET 20V 4.7A 2.0W 60mohm @ 4.5V RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| SI3443CDV | 制造商:VISHAY 制造商全稱:Vishay Siliconix 功能描述:P-Channel 20-V (D-S) MOSFET |
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