參數(shù)資料
型號(hào): SI3232PPT0-EVB
廠商: Silicon Laboratories Inc
文件頁(yè)數(shù): 43/128頁(yè)
文件大?。?/td> 0K
描述: BOARD EVAL W/SI3200 INTERFACE
標(biāo)準(zhǔn)包裝: 1
系列: ProSLIC®
主要目的: 接口,模擬前端(AFE)
已用 IC / 零件: Si3232
已供物品: 板,CD
第1頁(yè)第2頁(yè)第3頁(yè)第4頁(yè)第5頁(yè)第6頁(yè)第7頁(yè)第8頁(yè)第9頁(yè)第10頁(yè)第11頁(yè)第12頁(yè)第13頁(yè)第14頁(yè)第15頁(yè)第16頁(yè)第17頁(yè)第18頁(yè)第19頁(yè)第20頁(yè)第21頁(yè)第22頁(yè)第23頁(yè)第24頁(yè)第25頁(yè)第26頁(yè)第27頁(yè)第28頁(yè)第29頁(yè)第30頁(yè)第31頁(yè)第32頁(yè)第33頁(yè)第34頁(yè)第35頁(yè)第36頁(yè)第37頁(yè)第38頁(yè)第39頁(yè)第40頁(yè)第41頁(yè)第42頁(yè)當(dāng)前第43頁(yè)第44頁(yè)第45頁(yè)第46頁(yè)第47頁(yè)第48頁(yè)第49頁(yè)第50頁(yè)第51頁(yè)第52頁(yè)第53頁(yè)第54頁(yè)第55頁(yè)第56頁(yè)第57頁(yè)第58頁(yè)第59頁(yè)第60頁(yè)第61頁(yè)第62頁(yè)第63頁(yè)第64頁(yè)第65頁(yè)第66頁(yè)第67頁(yè)第68頁(yè)第69頁(yè)第70頁(yè)第71頁(yè)第72頁(yè)第73頁(yè)第74頁(yè)第75頁(yè)第76頁(yè)第77頁(yè)第78頁(yè)第79頁(yè)第80頁(yè)第81頁(yè)第82頁(yè)第83頁(yè)第84頁(yè)第85頁(yè)第86頁(yè)第87頁(yè)第88頁(yè)第89頁(yè)第90頁(yè)第91頁(yè)第92頁(yè)第93頁(yè)第94頁(yè)第95頁(yè)第96頁(yè)第97頁(yè)第98頁(yè)第99頁(yè)第100頁(yè)第101頁(yè)第102頁(yè)第103頁(yè)第104頁(yè)第105頁(yè)第106頁(yè)第107頁(yè)第108頁(yè)第109頁(yè)第110頁(yè)第111頁(yè)第112頁(yè)第113頁(yè)第114頁(yè)第115頁(yè)第116頁(yè)第117頁(yè)第118頁(yè)第119頁(yè)第120頁(yè)第121頁(yè)第122頁(yè)第123頁(yè)第124頁(yè)第125頁(yè)第126頁(yè)第127頁(yè)第128頁(yè)
Si3232
Preliminary Rev. 0.96
21
Not
fo
r N
ew
esi
gn
s
Figure 7. DC Linefeed Overhead Voltages
(Forward State)
4.3.1. Calculating Overhead Voltages
The two programmable overhead voltages, VOV and
VCM, represent one portion of the total voltage between
VBAT and ground as illustrated in Figure 7. In normal
operating conditions, these overhead voltages are
sufficiently low to maintain the desired TIP-RING
voltage, VOC. There are, however, certain conditions
under which the user must exercise care in providing a
battery supply with enough amplitude to supply the
required TIP-RING voltage as well as enough margin to
accommodate these overhead voltages. The VCM
voltage is programmed for a given operating condition.
Therefore,
the
open-circuit
voltage,
VOC, varies
according to the required overhead voltage, VOV, and
the supplied battery voltage, VBAT. The user should pay
special attention to the maximum VOV and VCM that
might be required for each operating state.
In the off-hook active state, sufficient VOC must be
maintained to correctly power the phone from the
battery supply that has been provided. Since the battery
supply depends on the state of the input supply (i.e.,
charging, discharging, or battery backup mode), the
user must decide how much loop current is required and
determine the maximum loop impedance that can be
driven based on the battery supply provided.
The minimum battery supply required can be calculated
according to the following equation.
VCM and VOV are provided in Table 8.
The default VCM value of 3 V provides sufficient
overhead for a 3.1 dBm signal into a 600
loop
impedance.
A VOV value of 4 V provides sufficient headroom to
source a maximum ILOOP of 45 mA along with a
3.1 dBm audio signal and an ABIAS setting of 16 mA.
For a typical operating condition, VBAT = –56 V and
ILIM =22mA:
VOC,MAX =56V – (3V + 4V)=49V
These conditions apply when the dc-sensing inputs,
STIPDCa/b and SRINGDCa/b, are placed on the SLIC
side of any protection resistance placed in series with
the TIP and RING leads. If line-side sensing is desired,
both VOV and VCM must be increased by a voltage
equal to RPROT x ILIM where RPROT is the value of each
protection resistor. Other safety precautions may apply.
During Ringing" on page 40 for details on calculating the
overhead voltage during the ringing state.
The Si3232 uses both voltage and current information to
control TIP and RING. Sense resistor RDC (see
Figure 6) measures dc line voltages on TIP and RING;
capacitor CAC couples the ac line voltages on the TIP
and RING leads to be measured. The Si3232 uses the
Si3200 linefeed interface IC to drive TIP and RING and
to isolate the high-voltage line from the low-voltage
Si3232.
The Si3232 measures voltage at various nodes to
monitor the linefeed current. RDC and RBAT provide
these
measuring
points.
The
sense
circuitry
is
calibrated on-chip to ensure measurement accuracy.
Constant I Region
Constant V Region
V
CM
V
OC
V
OV
V
OV
R
LOOP
V
BATH
V
TIP
V
RING
V
BATL
Secondary V
BAT
Selected
V
Loop Closure Threshold
V
BAT
V
OC
V
CM
V
OV
++
相關(guān)PDF資料
PDF描述
UPZW6101MHD CAP ALUM 100UF 420V 20% RADIAL
SI3232DC0-EVB DAUGHTER CARD W/SI3200 INTERFACE
UPZ2D391MHD CAP ALUM 390UF 200V 20% RADIAL
SI3230PPQX-EVB BOARD EVAL W/DISCRETE INTERFACE
M3UFK-1636R IDC CABLE - MKS16K/MC16M/MCF16K
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
SI3232PPTX-EVB 功能描述:音頻 IC 開發(fā)工具 Si3232 EVAL BOARD RoHS:否 制造商:Texas Instruments 產(chǎn)品:Evaluation Kits 類型:Audio Amplifiers 工具用于評(píng)估:TAS5614L 工作電源電壓:12 V to 38 V
SI3232-X-FQ 制造商:未知廠家 制造商全稱:未知廠家 功能描述:DUAL PROGRAMMABLE CMOS SLIC WITH LINE MONITORING
SI3232-X-GQ 制造商:SILABS 制造商全稱:SILABS 功能描述:DUAL PROGRAMMABLE CMOS SLIC WITH LINE MONITORING
SI3233 制造商:SILABS 制造商全稱:SILABS 功能描述:PROSLIC㈢ PROGRAMMABLE CMOS SLIC WITH RINGING/BATTERY VOLTAGE GENERATION
Si3233-C-FM 功能描述:射頻無(wú)線雜項(xiàng) Single-Chan SLIC RoHS:否 制造商:Texas Instruments 工作頻率:112 kHz to 205 kHz 電源電壓-最大:3.6 V 電源電壓-最小:3 V 電源電流:8 mA 最大功率耗散: 工作溫度范圍:- 40 C to + 110 C 封裝 / 箱體:VQFN-48 封裝:Reel