參數(shù)資料
型號： SI3216MPPTX-EVB
廠商： Silicon Laboratories Inc
文件頁數(shù)： 38/122頁
文件大?。?/td> 0K
描述： BOARD EVAL W/DISCRETE INTERFACE
標準包裝： 1
Si3216
22
Rev. 1.0
Not
Recommended
fo
r N
ew
D
esi
gn
s
Figure 12. Si3216(M) Typical Application Circuit Using Discrete Line Interface Circuit
Table 14. Si3216(M) External Component Values
Component
Value
Supplier/Part Number
C1,C2
10 F, 6 V Ceramic/Tantalum or 16 V Low Leakage
Electrolytic,
20%
Murata, Panasonic, Nichicon
URL1C100MD
C3,C4
220 nF, 100 V, X7R,
20%
Murata, Johanson, Novacap, Venkel
C5,C6
22 nF, 100 V, X7R,
20%
Murata, Johanson, Novacap, Venkel
C7,C8
220 nF, 50 V, X7R,
20%
Murata, Johanson, Novacap, Venkel
C15,C16,C17
0.1 F, 6 V, Y5V,
20%
Murata, Johanson, Novacap, Venkel
C26
0.1 F, 100 V, X7R,
20%
Murata, Johanson, Novacap, Venkel
C30, C31
10 F, 16 V, Electrolytic,
20%
Panasonic
L2
47 H, 150 A
Coilcraft
Q1,Q2,Q3,Q4
120 V, PNP, BJT
Central Semi CMPT5401; ON Semi
MMBT5401LT1, 2N5401; Zetex
FMMT5401;
Fairchild 2N5401; Samsung 2N5401
Q5,Q6
120 V, NPN, BJT
Central Semi CZT5551, ON Semi
2N5551;
Fairchild 2N5551; Phillips 2N5551
Q9
NPN General Purpose BJT
ON Semi MMBT2222ALT1; Central Semi
CMPT2222A; Zetex FMMT2222
Si321
6(
M)
R15
243
C2
10uF
C1
10uF
R14
40.2k
C5
22nF
C6
22nF
ITIPP
ITIPN
STIPE
IRINGP
IRINGN
SRINGE
R1
200k
R3
200k
TIP
RING
VD
DD
VDDA1
GN
DD
GN
D
A
IREF
CAPP
CAPM
IGMP
IGMN
QGND
SCLK
SDI
SDO
CS
FSYNC
PCLK
DRX
DTX
SPI Bus
PCM Bus
VDDA2
INT
RESET
R5
100k
R281
R21
15
Protection
Circuit
GND
R2
100k
R4
100k
15
20
28
29
17
26
25
19
18
21
16
31
23
10
27
30
TE
S
T
32
38
37
36
1
6
3
4
5
2
7
24
22
11
12
14
13
Q9
2N2222
C26
0.1uF
R291
VCC
SD
C
L
SD
CH
DC-DC Converter
Circuit
D
C
DRV
DCF
F
VDC
VBAT
VDC
SDCL
SD
C
H
DCD
RV
DCF
F
STIPDC
STIPAC
R262
40.2k
GND
R322
10k
VCC
Note 2
Note 1
Notes:
1. Values and configurations for these
components can be derived from Table 18
or from “AN45: Design Guide for the
Si3210/15/16 DC-DC Converter”.
2. Only one component per system needed.
3. All circuit grounds should have a single-
point connection to the ground plane.
4. Optional components to improve idle
channel noise.
9
8
34
33
R7
80.6
C7
220nF
Q5
5551
Q3
5401
Q2
5401
R11
10
R12
5.1k
R6
80.6
C8
220nF
Q6
5551
Q4
5401
Q1
5401
R10
10
R13
5.1k
GND
C4
220nF
R9
4.7k
SRINGAC
SRINGDC
C3
220nF
R8
4.7k
SVBAT
R102 (100k)
C32
4
0.1 F
V DDA1
C3 0
10
F
VDDA2
V DDD
C1 6
0.1
F
C1 5
0.1
F
C1 7
0. 1
F
10
F
10 V
C3 1
47
H
L2
R104 (100k)
C34
4
0.1 F
R104 (100k)
C33
4
0.1 F
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