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參數(shù)資料
型號(hào)： SI3016-BS
廠商： Silicon Laboratories Inc
文件頁(yè)數(shù)： 47/50頁(yè)
文件大?。?/td> 0K
描述： IC LINE-SIDE DAA 16SOIC
標(biāo)準(zhǔn)包裝： 48
數(shù)據(jù)格式： V.90
電源電壓： 3.3V，5V
安裝類型： 表面貼裝
封裝/外殼： 16-SOIC（0.154"，3.90mm 寬）
供應(yīng)商設(shè)備封裝： 16-SOIC N
包裝： 管件
Si3016
6
Rev. 1.0
Table 3. DC Characteristics
(TA = 0 to 70 °C for K-Grade and –40 to 85 °C for B-Grade)
Parameter
Symbol
Test Condition
Min
Typ
Max
Unit
Input Leakage Current
IL
–10
—
10
A
Power Supply Current, Analog*
IA
—0.3
—
mA
*Note: This current is required from the integrated system-side interface to communicate with the Si3016 through the isolation
interface.
Table 4. AC Characteristics
(TA = 0 to 70 °C for K-Grade and –40 to 85 °C for B-Grade; see Figure 6 on page 9)
Parameter
Symbol
Test Condition
Min
Typ
Max
Unit
Sample Rate
Fs
Fs = FPLL2/5120
7.2
—
11.025
KHz
Transmit Frequency Response
Low –3 dBFS Corner
—
0
—
Hz
Receive Frequency Response
Low –3 dBFS Corner
—
5
—
Hz
Transmit Full Scale Level1
VFS
FULL = 0 (–1 dBm)
—
1
—
VPEAK
FULL = 1 (+3.2 dBm)2
—1.58
—
VPEAK
Receive Full Scale Level1,3
VFS
FULL = 0 (–1 dBm)
—
1
—
VPEAK
FULL = 1 (+3.2 dBm)3
—1.58
—
VPEAK
Dynamic Range4,5,6
DR
ACT=0, DCT=10 (FCC)
IL=100 mA
—82
—
dB
Dynamic Range4,5,7
DR
ACT=0, DCT=01 (Japan)
IL=20 mA
—83
—
dB
Dynamic Range4,5,6
DR
ACT=1, DCT=11(CTR21)
IL=60 mA
—84
—
dB
Transmit Total Harmonic Distortion6,8
THD
ACT=0, DCT=10 (FCC)
IL=100 mA
—–85
—
dB
Transmit Total Harmonic Distortion7,8
THD
ACT=0, DCT=01 (Japan)
IL=20 mA
—–76
—
dB
Receive Total Harmonic Distortion7,8
THD
ACT=0, DCT=01 (Japan)
IL=20 mA
—–74
—
dB
Receive Total Harmonic Distortion6,8
THD
ACT=1, DCT=11 (CTR21)
IL=60 mA
—–82
—
dB
Dynamic Range (Caller ID mode)
DRCID
VIN=1kHz, –13dBm
—
60
—
dB
Notes:
1. Measured at TIP and RING with 600
Ω termination at 1 kHz, as shown in Figure 1.
2. R2 should be changed to a 243
Ω resistor when the FULLSCALE bit (FULL) is set to 1 (Register 18, bit 7).
3. Receive full scale level will produce –0.9 dBFS at SDO.
4. DR
= 20 x log |Vin| + 20 x log (RMS signal/RMS noise).
5. Measurement is 300 to 3400 Hz. Applies to both transmit and receive paths.
6. Vin
= 1 kHz, –3 dBFS, Fs = 10300 Hz.
7. Vin
= 1 KHz, –6 dBFS, Fs = 10300 Hz.
8. THD
= 20 x log (RMS distortion/RMS signal).
9. The AOUT pin is an optional pin located on the integrated system-side module. VD refers to the digital power supply of
the integrated system-side module.
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參數(shù)描述
SI3016-BSR 制造商:Silicon Laboratories Inc 功能描述:
Si3016-F-FS 功能描述:電信線路管理 IC Line-Side device for processors RoHS:否 制造商:STMicroelectronics 產(chǎn)品:PHY 接口類型:UART 電源電壓-最大:18 V 電源電壓-最小:8 V 電源電流:30 mA 最大工作溫度:+ 85 C 最小工作溫度:- 40 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:VFQFPN-48 封裝:Tray
SI3016-F-FSR 功能描述:電信線路管理 IC Line-Side device Processor Integrated RoHS:否 制造商:STMicroelectronics 產(chǎn)品:PHY 接口類型:UART 電源電壓-最大:18 V 電源電壓-最小:8 V 電源電流:30 mA 最大工作溫度:+ 85 C 最小工作溫度:- 40 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:VFQFPN-48 封裝:Tray
SI3016-F-KS 制造商:Silicon Laboratories Inc 功能描述:
SI3016-F-KSR 制造商:Silicon Laboratories Inc 功能描述:
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