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參數(shù)資料
| 型號： | SI2315BDS |
| 廠商： | Vishay Intertechnology,Inc. |
| 英文描述： | P-Channel 1.8-V (G-S) MOSFET |
| 中文描述： | P通道1.8 V（G-S）MOSFET |
| 文件頁數(shù)： | 1/5頁 |
| 文件大?。?/td> | 61K |
| 代理商： | SI2315BDS |
Si2315BDS
Vishay Siliconix
Document Number: 72014
S-31990—Rev. D, 13-Oct-03
www.vishay.com
1
P-Channel 1.8-V (G-S) MOSFET
PRODUCT SUMMARY
V
DS
(V)
r
DS(on)
( )
I
D
(A)
0.050 @ V
GS
= -4.5 V
0.065 @ V
GS
= -2.5 V
0.100 @ V
GS
= -1.8 V
-3.85
-12
-3.4
-2.7
G
S
D
Top View
2
3
TO-236
(SOT-23)
1
Si2315BDS *(M5)
*Marking Code
Ordering Information: Si2315BDS-T1
ABSOLUTE MAXIMUM RATINGS (T
A
= 25 C UNLESS OTHERWISE NOTED)
Parameter
Symbol
5 sec
Steady State
Unit
Drain-Source Voltage
V
DS
-12
V
Gate-Source Voltage
V
GS
8
Continuous Drain Current
(T
J
= 150 C)
a
T
A
= 25 C
I
D
-3.85
-3.0
T
A
= 70 C
-3.0
-2.45
A
Pulsed Drain Current
a
I
DM
-12
Continuous Source Current (Diode Conduction)
a
I
S
-1.0
-0.62
Power Dissipation
a
T
A
= 25 C
P
D
1.19
0.75
W
T
A
= 70 C
0.76
0.48
Operating Junction and Storage Temperature Range
T
J
, T
stg
-55 to 150
C
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Typical
Maximum
Unit
Maximum Junction-to-Ambient
t A bi
a
t
5 sec.
R
thJA
85
105
Steady State
130
166
C/W
Maximum Junction-to-Foot (Drain)
Steady State
R
thJF
60
75
Notes
a.
b.
For SPICE model information via the Worldwide Web: http://www.vishay.com/www/product/spice.htm
Surface Mounted on FR4 Board.
t
5 sec.
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PDF描述 |
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| Si2315DS-T1 | P-Channel 1.25-W, 1.8-V (G-S) MOSFET |
| SI2315DS | P-Channel 1.25-W, 1.8-V (G-S) MOSFET |
| SI2316DS | Dual N-Channel 30-V (D-S) MOSFET with Schottky Diode |
| SI2319DS | P-Channel 40-V (D-S) MOSFET |
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| SI2315BDS-T1 | 功能描述:MOSFET 1.8V 3.2A 1.25W RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| SI2315BDS-T1-E3 | 功能描述:MOSFET 1.8V 3.2A 1.25W RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| SI2315BDS-T1-E3 | 制造商:Vishay Siliconix 功能描述:MOSFET |
| SI2315BDST1GE3 | 制造商:Vishay Angstrohm 功能描述:Trans MOSFET P-CH 12V 3A 3-Pin TO-236 T/R 制造商:Vishay 功能描述:Trans MOSFET P-CH 12V 3A 3-Pin TO-236 T/R |
| SI2315BDS-T1-GE3 | 功能描述:MOSFET 12V 3.85A 1.19W 50mohm @ 4.5V RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
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