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參數(shù)資料
| 型號(hào)： | SI1426DH |
| 廠商： | Vishay Intertechnology,Inc. |
| 元件分類： | MOSFETs |
| 英文描述： | Dual N-Channel 30-V (D-S) MOSFET with Schottky Diode |
| 中文描述： | 雙N溝道30 V的（副）MOSFET的肖特基二極管 |
| 文件頁數(shù)： | 2/4頁 |
| 文件大?。?/td> | 43K |
| 代理商： | SI1426DH |
Si1426DH
Vishay Siliconix
New Product
www.vishay.com
2
Document Number: 71805
S-05803
—
Rev. A, 18-Feb-02
Parameter
Symbol
Test Condition
Min
Typ
Max
Unit
Static
Gate Threshold Voltage
V
GS(th)
V
DS
= V
GS
, I
D
= 250 A
0.80
2.5
V
Gate-Body Leakage
I
GSS
V
DS
= 0 V, V
GS
=
20 V
100
nA
V
DS
= 24 V, V
GS
= 0 V
1
Zero Gate Voltage Drain Current
I
DSS
V
DS
= 24 V, V
GS
= 0 V, T
J
= 85 C
5
A
On-State Drain Current
a
I
D(on)
V
DS
= 5 V, V
GS
= 10 V
10
A
V
GS
= 10 V, I
D
= 3.6 A
0.061
0.075
Drain-Source On-State Resistance
a
r
DS(on)
V
GS
= 4.5 V, I
D
= 2.0 A
0.092
0.115
Forward Transconductance
a
g
fs
V
DS
= 10 V, I
D
= 3.6 A
5
S
Diode Forward Voltage
a
V
SD
I
S
= 1.3 A, V
GS
= 0 V
0.78
1.2
V
Dynamic
b
Total Gate Charge
Q
g
1.9
3
Gate-Source Charge
Q
gs
V
DS
= 15 V,
V
GS
= 4.5 V, I
D
= 3.6 A
0.75
nC
Gate-Drain Charge
Q
gd
0.75
Turn-On Delay Time
t
d(on)
10
15
Rise Time
t
r
V
= 15 V, R
= 15
1 A, V
GEN
= 10 V, R
G
= 6
12
18
Turn-Off Delay Time
t
d(off)
I
D
15
22
ns
Fall Time
t
f
9
15
Source-Drain Reverse Recovery
t
rr
I
F
= 1.4 A. di/dt = 100/ s
40
70
Notes
a.
b.
Pulse test; pulse width
Guaranteed by design, not subject to production testing.
300 s, duty cycle
2%.
0
2
4
6
8
10
0
1
2
3
4
5
0
2
4
6
8
10
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
V
GS
= 10 thru 5 V
T
C
= 125 C
–
55 C
25 C
Output Characteristics
Transfer Characteristics
V
DS
–
Drain-to-Source Voltage (V)
–
I
D
V
GS
–
Gate-to-Source Voltage (V)
–
I
D
3 V
4 V
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| SI1426DH_05 | 制造商:VISHAY 制造商全稱:Vishay Siliconix 功能描述:N-Channel 30-V (D-S) MOSFET |
| SI1426DH_08 | 制造商:VISHAY 制造商全稱:Vishay Siliconix 功能描述:N-Channel 30-V (D-S) MOSFET |
| SI1426DH_10 | 制造商:VISHAY 制造商全稱:Vishay Siliconix 功能描述:N-Channel 30 V (D-S) MOSFET |
| SI1426DH-T1-E3 | 功能描述:MOSFET 30V 3.6A 0.075Ohm RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| SI1426DH-T1-GE3 | 功能描述:MOSFET 30V 3.6A .075ohms RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
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