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參數(shù)資料
| 型號(hào)： | SI1410EDH |
| 廠商： | Vishay Intertechnology,Inc. |
| 英文描述： | N-Channel 20-V (D-S) MOSFET |
| 中文描述： | N溝道20 - V（下局副局長(zhǎng)）MOSFET的 |
| 文件頁(yè)數(shù)： | 2/5頁(yè) |
| 文件大?。?/td> | 49K |
| 代理商： | SI1410EDH |
Si1410EDH
Vishay Siliconix
New Product
www.vishay.com
2
Document Number: 71409
S-03185
—
Rev. A, 05-Mar-01
Parameter
Symbol
Test Condition
Min
Typ
Max
Unit
Static
Gate Threshold Voltage
V
GS(th)
V
DS
= V
GS
, I
D
= 250 A
0.45
V
V
DS
= 0 V, V
GS
=
4.5 V
1
A
Gate-Body Leakage
I
GSS
V
DS
= 0 V, V
GS
=
12 V
10
mA
V
DS
= 16 V, V
GS
= 0 V
1
Zero Gate Voltage Drain Current
I
DSS
V
DS
= 16 V, V
GS
= 0 V, T
J
= 85 C
5
A
On-State Drain Current
a
I
D(on)
V
DS
= 5 V, V
GS
= 4.5 V
4
A
V
GS
= 4.5 V, I
D
= 3.7 A
0.055
0.070
Drain-Source On-State Resistance
a
r
DS(on)
V
GS
= 2.5 V, I
D
= 3.4
A
0.065
0.080
V
GS
= 1.8 V, I
D
= 1.7
A
0.080
0.100
Forward Transconductance
a
g
fs
V
DS
= 10 V, I
D
= 3.7 A
10
S
Diode Forward Voltage
a
V
SD
I
S
= 1.4 A, V
GS
= 0 V
0.75
1.1
V
Dynamic
b
Total Gate Charge
Q
g
5.6
8
Gate-Source Charge
Q
gs
V
DS
= 10 V,
V
GS
= 4.5 V, I
D
= 3.7 A
0.75
nC
Gate-Drain Charge
Q
gd
1.10
Turn-On Delay Time
t
d(on)
0.15
0.25
Rise Time
t
r
V
= 10 V, R
= 10
1 A, V
GEN
= 4.5 V, R
G
= 6
0.4
0.6
Turn-Off Delay Time
t
d(off)
I
D
1.9
2.8
s
Fall Time
t
f
1.2
1.8
Notes
a.
b.
Pulse test; pulse width
Guaranteed by design, not subject to production testing.
300 s, duty cycle
2%.
0.01
100
10,000
Gate Current vs. Gate-Source Voltage
0
2
4
6
8
10
0
3
6
9
12
15
18
Gate-Current vs. Gate-Source Voltage
V
GS
–
Gate-to-Source Voltage (V)
0.1
1
10
1,000
V
GS
–
Gate-to-Source Voltage (V)
–
I
G
A
0
3
6
9
12
T
J
= 25 C
T
J
= 150 C
–
I
G
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| SI1410EDH_08 | 制造商:VISHAY 制造商全稱:Vishay Siliconix 功能描述:N-Channel 20-V (D-S) MOSFET |
| SI1410EDH_10 | 制造商:VISHAY 制造商全稱:Vishay Siliconix 功能描述:N-Channel 20 V (D-S) MOSFET |
| SI1410EDH-T1 | 功能描述:MOSFET 20V 3.7A RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| SI1410EDH-T1-E3 | 功能描述:MOSFET 20V 3.7A RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| SI1410EDH-T1-GE3 | 制造商:Vishay 功能描述:N-Ch MOSFET 20V 70mohm @ 4.5V 制造商:Vishay 功能描述:Trans MOSFET N-CH 20V 2.9A 6-Pin SC-70 T/R |
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