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參數(shù)資料
| 型號： | SI1407DL |
| 廠商： | Vishay Intertechnology,Inc. |
| 英文描述： | P-Channel 1.8-V (G-S) MOSFET |
| 中文描述： | P通道的1.8 V（GS）的MOSFET的 |
| 文件頁數(shù)： | 2/4頁 |
| 文件大?。?/td> | 64K |
| 代理商： | SI1407DL |
Si1407DL
Vishay Siliconix
New Product
www.vishay.com FaxBack 408-970-5600
2-2
Document Number: 71074
S-01561—Rev. C, 17-Jul-00
Parameter
Symbol
Test Condition
Min
Typ
Max
Unit
Static
Gate Threshold Voltage
V
GS(th)
V
DS
= V
GS
, I
D
= –250 A
–0.45
V
Gate-Body Leakage
I
GSS
V
DS
= 0 V, V
GS
=
8
V
100
nA
Zero Gate Voltage Drain Current
I
DSS
V
DS
= –9.6 V, V
GS
= 0 V
–1
A
V
DS
= –9.6 V, V
GS
= 0 V, T
J
= 85 C
–5
On-State Drain Current
a
I
D(on)
V
DS
= –5 V, V
GS
= –4.5 V
–2
A
D i S
Drain-Source On-State Resistance
O S
a
V
GS
= –4.5 V, I
D
= –1.8 A
0.105
0.130
r
DS(on)
V
GS
= –2.5 V, I
D
= –1.5 A
0.140
0.170
V
GS
= –1.8 V, I
D
= –0.8 A
0.185
0.225
Forward Transconductance
a
g
fs
V
DS
= –10
V, I
D
= –1.8 A
4.3
S
Diode Forward Voltage
a
V
SD
I
S
= –0.8 A, V
GS
= 0 V
–0.77
–1.1
V
Dynamic
b
Total Gate Charge
Q
g
V
DS
= –6 V V
V
GS
= –4.5 V, I
D
= –1.8 A
4 5 V I
1 8 A
5.5
7.0
Gate-Source Charge
Q
gs
0.95
nC
Gate-Drain Charge
Q
gd
1.10
Turn-On Delay Time
t
d(on)
V
= –6 ,
= 10
1 A V
–1 A, V
GEN
= –4.5 V, R
G
= 6
8
12
Rise Time
t
r
I
D
4 5 V R
33
50
Turn-Off Delay Time
t
d(off)
32
50
ns
Fall Time
t
f
29
45
Source-Drain Reverse Recovery Time
t
rr
I
F
= –0.8 A, di/dt = 100 A/ s
20
40
Notes
a.
b.
Pulse test; pulse width
Guaranteed by design, not subject to production testing.
300 s, duty cycle
2%.
0
0.8
1.6
2.4
3.2
4.0
0
0.5
1.0
1.5
2.0
2.5
0
1
2
3
4
5
0
1
2
3
4
5
V
GS
= 5 thru 2 V
T
C
= 125 C
–55 C
25 C
Output Characteristics
Transfer Characteristics
V
DS
– Drain-to-Source Voltage (V)
–
I
D
V
GS
– Gate-to-Source Voltage (V)
–
I
D
1 V
1.5 V
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相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| SI1407DL-T1 | 功能描述:MOSFET 12V 1.8A RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| SI1407DL-T1-E3 | 功能描述:MOSFET 12V 1.8A RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| SI1410EDH | 制造商:VISHAY 制造商全稱:Vishay Siliconix 功能描述:N-Channel 20-V (D-S) MOSFET |
| SI1410EDH_08 | 制造商:VISHAY 制造商全稱:Vishay Siliconix 功能描述:N-Channel 20-V (D-S) MOSFET |
| SI1410EDH_10 | 制造商:VISHAY 制造商全稱:Vishay Siliconix 功能描述:N-Channel 20 V (D-S) MOSFET |
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