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參數(shù)資料
| 型號： | SI1026X |
| 廠商： | Vishay Intertechnology,Inc. |
| 英文描述： | N-Channel 60-V (D-S) MOSFET |
| 中文描述： | N通道60 - V（下局副局長）MOSFET的 |
| 文件頁數(shù)： | 2/4頁 |
| 文件大?。?/td> | 39K |
| 代理商： | SI1026X |
Si1026X
Vishay Siliconix
New Product
www.vishay.com
2
Document Number: 71434
S-03518
—
Rev. A, 23-Apr-01
Limits
Parameter
Symbol
Test Conditions
Min
Typ
Max
Unit
Static
Drain-Source Breakdown Voltage
V
(BR)DSS
V
GS
= 0 V, I
D
= 10 A
60
Gate-Threshold Voltage
V
GS(th)
V
DS
= V
GS
, I
D
= 0.25 mA
1
2.5
V
V
DS
= 0 V, V
GS
=
10 V
150
Gate-Body Leakage
I
GSS
V
DS
= 0 V, V
GS
=
5 V
50
V
DS
= 50 V, V
GS
= 0 V
10
nA
Zero Gate Voltage Drain Current
I
DSS
T
J
= 85 C
100
V
DS
= 10 V, V
GS
= 4.5 V
500
On-State Drain Current
a
I
D(on)
V
DS
= 7.5 V, V
GS
= 10 V
800
mA
V
GS
= 4.5 V, I
D
= 200 mA
3.0
Drain-Source On-Resistance
a
r
DS(on)
V
GS
= 10 V, I
D
= 500 mA
1.40
T
J
= 125 C
2.50
Forward Transconductance
a
g
fs
V
DS
= 10 V, I
D
= 200 mA
200
mS
Diode Forward Voltage
a
V
SD
V
GS
= 0 V, I
S
= 200 mA
1.40
V
Dynamic
b
Total Gate Charge
Q
g
600
Gate-Source Charge
Q
gs
V
DS
=10 V, I
= 250 mA
V
GS
= 4.5 V
120
pC
Gate-Drain Charge
Q
gd
225
Input Capacitance
C
iss
30
Output Capacitance
C
oss
V
DS
= 25 V, V
= 0 V
f = 1 MHz
6
pF
Reverse Transfer Capacitance
C
rss
3
Switching
b, c
Turn-On Time
t
(on)
V
= 30 V, R
L
= 150
I
D
= 200 mA, V
GEN
= 10 V
R
G
= 10
15
Turn-Off Time
t
(off)
20
ns
Notes
a.
b.
c.
Pulse test: PW
For DESIGN AID ONLY, not subject to production testing.
Switching time is essentially independent of operating temperature.
300 s duty cycle
2%.
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| SI1026X_08 | 制造商:VISHAY 制造商全稱:Vishay Siliconix 功能描述:N-Channel 60-V (D-S) MOSFET |
| SI1026X_10 | 制造商:VISHAY 制造商全稱:Vishay Siliconix 功能描述:N-Channel 60 V (D-S) MOSFET |
| SI1026X-T1 | 功能描述:MOSFET 60V 0.5A RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| SI1026X-T1-E3 | 功能描述:MOSFET 60V 0.5A RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| SI1026X-T1-E3 | 制造商:Vishay Siliconix 功能描述:MOSFET |
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