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SENSITRON
SEMICONDUCTOR
TECHNICAL DATA
DATA SHEET 4074, REV. G
HERMETIC SILICON CARBIDE RECTIFIER
DESCRIPTION: A 600-VOLT, 20 AMP POWER SILICON CARBIDE RECTIFIER IN A HERMETIC TO-257
PACKAGE AVAILABLE SCREENED TO ANY REQUIRED LEVEL
FEATURES:
NO RECOVERY TIME OR REVERSE RECOVERY LOSSES
NO TEMPERATURE INFLUENCE ON SWITCHING BEHAVIOR
High Frequency Option - Non-magnetic Glidcop leads are available for improved performance at
high frequency; use part number prefix SHDG
Ceramic Seal Option – For ceramic seals use part number prefix SHDC
MAXIMUM RATINGS
ALL RATINGS ARE @ TC = 25 °C UNLESS OTHERWISE SPECIFIED.
RATING
SYMBOL
MAX.
UNITS
PEAK INVERSE VOLTAGE
PIV
600
Volts
MAXIMUM DC OUTPUT CURRENT (With TC = 65
OC for P and N suffixes)
IO
20
Amps
MAXIMUM DC OUTPUT CURRENT (With TC = 65
OC for Single and D suffixes)
IO
10
Amps
MAXIMUM REPETITIVE FORWARD SURGE CURRENT PER LEG
(t = 8.3ms, Sine) per leg, TC = 25
OC
IFRM
50
Amps
MAXIMUM POWER DISSIPATION, TC = 25
OC,
Pd
40
W
MAXIMUM THERMAL RESISTANCE, Junction to Case PER LEG
RθJC
2.5
°C/W
MAXIMUM OPERATING AND STORAGE TEMPERATURE RANGE*
Top, Tstg
-55 to 200
°C
* Note: SiC semiconductors will handle at or above this operating and storage temperature. However, extended operational use of the
packaged device above 175C may reduce its future performance. All qualification testing and screening per MIL-PRF-19500 will only be
performed to 175C.
ELECTRICAL CHARACTERISTICS
CHARACTERISTIC
TYP
MAX.
UNITS
MAXIMUM FORWARD VOLTAGE DROP
TJ = 25°C
Pulsed (If = 10 A PER LEG) Vf
TJ = 150 °C
1.65
2.05
1.80
2.20
Volts
MAXIMUM FORWARD VOLTAGE DROP
TJ = 25°C
Pulsed (If = 6 A PER LEG) Vf
TJ = 150 °C
1.35
1.60
1.45
1.70
Volts
MAXIMUM REVERSE CURRENT (Ir @ 600V PIV PER LEG) TJ = 25 °C
TJ = 150 °C
0.04
0.08
0.15
0.50
mA
JUNCTION CAPACITANCE CT) (Vr =5V) per leg
CT
250
350
pF
TOTAL CAPACITIVE CHARGE
QC per leg
(VR=600V IF=20A di/dt=500A/μs TJ=25°C) This is design information only
35
N/A
nC
SHD626051
SHD626051P
SHD626051N
SHD626051D