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參數(shù)資料
| 型號： | SHD626160 |
| 廠商： | SENSITRON SEMICONDUCTOR |
| 元件分類： | 整流器 |
| 英文描述： | 20 A, SILICON CARBIDE, RECTIFIER DIODE, TO-257AA |
| 封裝： | HERMETIC SEALED, TO-257, 3 PIN |
| 文件頁數(shù)： | 2/4頁 |
| 文件大?。?/td> | 632K |
| 代理商： | SHD626160 |
Sensitron
221 West Industry Court Deer Park, NY 11729-4681
Phone (631) 586 7600
Fax (631) 242 9798 World Wide Web - www.sensitron.com E-mail - sales@sensitron.com
-10
-8
-6
-4
-2
0
2
4
6
8
10
-1.0E-07
-5.0E-08
0.0E+00
5.0E-08
1.0E-07
1.5E-07
2.0E-07
600V, 10A SiC
TJ = 25, 50, 100, 150°C
TJ = 25°C
TJ = 50°C
TJ = 100°C
TJ = 150°C
600V, 10A Si FRED
0
20
40
60
80
100
120
140
160
180
200
10
20
30
40
50
60
70
80
90
100
Switching Frequency (kHz)
IG
BT
Sw
it
chin
g
L
o
s
ses
(w
a
tts)
150
°C
100
°C
50
°C
SiC SBD
Si Ultrafast Diode
Ic = 20A, Vcc = 500V, Rg = 10 ohm
Parameter
Units
Si Pin
SiC
% Reduction
Peak reverse current
Ipr (A)
23
4
83%
Reverse recovery time
Trr (nS)
100
33
67%
Recovery charge
Qrr (nC)
1220
82
93%
Diode loss turn-off
Eoff Diode (mJ) 0.23
0.02
91%
Diode loss total
Ets Diode (mJ)
0.26
0.05
81%
IGBT loss turn-on
Eon IGBT (mJ)
0.94
0.24
74%
IGBT loss total
Ets IGBT (mJ)
1.83
0.88
52%
Conduction losses
Silicon Carbide Schottky Rectifiers
Sensitron
www.sensitron.com/sic.htm
Features/Benefits:
Essentially zero forward and reverse recovery
Temperature independent switching behavior
Positive temperature coefficient of VF
Easily paralleled for higher current
Electrical breakdown field 10x more than Si & GaAs
Thermal conductivity over 3x that of Si & almost 10x GaAs
3x Bandgap of silicon
Can operate at temperatures up to 300oC and frequencies in
excess of 1MHz
Smaller, lighter, more reliable
Available screened to Mil-PRF-19500, TX, TXV or S-level
Custom high voltage bridges are also available
SiC Schottky diode switching characteristics are
unaffected by temperature, di/dt or forward
current; all of which increase reverse
recovery current in silicon diodes.
SiC Schottky diodes saved 8W at 10KHz.
SiC Schottky diodes saved 80W at 100KHz.
The higher the switching frequency,
the more apparent the SiC advantages.
By using SiC Schottky
diodes, inverter losses
are cut upto 30+%
Efficiency is improved
due to the reduction in
switching losses
allowing the boost
switch to operate at
lower temperature.
Conclusion: Due to the lack of recovery charge,
Schottky Diodes in SiC technology make very high
pulse frequencies possible. Switching losses in the
diode are negligible, and turn-on switching losses
in a related switch become dramatically reduced.
The soft switching characteristics guarantee good
EMC behavior.
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