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參數(shù)資料
| 型號： | SHD620052P |
| 廠商： | SENSITRON SEMICONDUCTOR |
| 元件分類： | 整流器 |
| 英文描述： | 10 A, SILICON CARBIDE, RECTIFIER DIODE |
| 封裝： | HERMETIC SEALED, CERAMIC, LCC-5, 3 PIN |
| 文件頁數(shù)： | 1/2頁 |
| 文件大?。?/td> | 49K |
| 代理商： | SHD620052P |
221 WEST INDUSTRY COURT DEER PARK, NY 11729-4681 PHONE (631) 586-7600 FAX (631) 242-9798
World Wide Web - http://www.sensitron.com E-mail Address - sales@sensitron.com
SENSITRON
SEMICONDUCTOR
TECHNICAL DATA,
DATA SHEET 4080, REV. E
HERMETIC SILICON CARBIDE RECTIFIER
DESCRIPTION: A 1200-VOLT, 5 AMP POWER SILICON CARBIDE RECTIFIER IN A CERAMIC
HERMETIC LCC-5 PACKAGE
FEATURES:
NO RECOVERY TIME OR REVERSE RECOVERY LOSSES
NO TEMPERATURE INFLUENCE ON SWITCHING BEHAVIOR
SCREENED VERSIONS ARE AVAILABLE
MAXIMUM RATINGS
ALL RATINGS ARE @ TC = 25 °C UNLESS OTHERWISE SPECIFIED.
RATING
SYMBOL
MAX.
UNITS
PEAK INVERSE VOLTAGE
PIV
1200
Volts
MAXIMUM DC OUTPUT CURRENT (With Cathode Maintained @ TC = 65
OC,
Single Package)
IO
5
Amps
MAXIMUM DC OUTPUT CURRENT (With Cathode Maintained @ TC = 65
OC,
Dual Package)
IO
10
Amps
MAXIMUM REPETITIVE FORWARD SURGE CURRENT PER LEG
(t = 8.3ms, Sine) TC = 25
OC
IFRM
30
Amps
MAXIMUM NON-REPETITIVE FORWARD SURGE CURRENT PER LEG
(t = 10
μs, pulse) T
C = 25
OC
IFSM
100
Amps
MAXIMUM POWER DISSIPATION, TC = 25
OC
Pd
15
W
MAXIMUM THERMAL RESISTANCE, Junction to Case
RθJC
2.60
°C/W
MAXIMUM OPERATING TEMPERATURE RANGE
Top
-55 to +175
°C
MAXIMUM OPERATING AND STORAGE TEMPERATURE RANGE*
Top, Tstg
-55 to +200
°C
* Note: SiC semiconductors will handle at or above this operating and storage temperature. However, extended operational use of the packaged device
above 175C may reduce its future performance. All qualification testing and screening per MIL-PRF-19500 will only be performed to 175C.
ELECTRICAL CHARACTERISTICS
CHARACTERISTIC
TYP
MAX.
UNITS
MAXIMUM FORWARD VOLTAGE DROP (If = 5 A)
Vf
TJ = 25 °C
TJ = 175 °C
1.6
2.6
1.8
3.0
Volts
MAXIMUM REVERSE CURRENT (1200V PIV)
Ir
TJ = 25 °C
TJ=150 °C
0.05
0.10
0.20
1.00
mA
MAXIMUM JUNCTION CAPACITANCE (Vr =5V)
CT
450
PF
TOTAL CAPACITIVE CHARGE (VR=1200V IF=5A di/dt=500A/μs TJ=25°C) QC
28
N/A
nC
Application Note: Customers should be aware that at the current stage of technical development of SiC, the reverse avalanche
capabilities of the device are limited.
Customer designs will need to accommodate these limitations and avoid exposure of the device to this and other potentially
damaging conditions in their applications.
SHD620052
SHD620052P
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