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參數(shù)資料
| 型號： | SHB601031E |
| 廠商： | SENSITRON SEMICONDUCTOR |
| 元件分類： | 橋式整流 |
| 英文描述： | 8 A, SILICON, BRIDGE RECTIFIER DIODE, MO-078AA |
| 封裝： | HERMETIC SEALED, TO-258, 5 PIN |
| 文件頁數(shù)： | 1/3頁 |
| 文件大小： | 64K |
| 代理商： | SHB601031E |
221 WEST INDUSTRY COURT DEER PARK, NY 11729-4681 PHONE (631) 586-7600 FAX (631) 242-9798
World Wide Web - http://www.sensitron.com E-mail Address - sales@sensitron.com
SENSITRON_________
SEMICONDUCTOR
Technical Data
Datasheet 5066, Rev. A
Silicon Carbide Single Phase Full Wave Bridge
DESCRIPTION: 600-VOLT, 4 AMP POWER SILICON CARBIDE SINGLE PHASE FULL WAVE BRIDGE IN
A HERMETIC 5-LEAD TO-258 (MO-078) PACKAGE
FEATURES:
NO RECOVERY TIME OR REVERSE RECOVERY LOSSES
NO TEMPERATURE INFLUENCE ON SWITCHING BEHAVIOR
MAXIMUM RATINGS
ALL RATINGS ARE @ TC = 25 °C UNLESS OTHERWISE SPECIFIED.
RATING
SYMBOL
MAX.
UNITS
PEAK INVERSE VOLTAGE
PIV
600
Volts
MAXIMUM DC OUTPUT CURRENT (With TC = 65
OC) WHEN USED AS
A BRIDGE
IO
8
Amps
MAXIMUM REPETITIVE FORWARD SURGE CURRENT
(t = 8.3ms, Sine) per leg, TC = 25
OC
IFRM
20
Amps
MAXIMUM NON-REPETITIVE FORWARD SURGE CURRENT
(t = 10
μs, pulse) per leg, T
C = 25
OC
IFSM
110
Amps
MAXIMUM POWER DISSIPATION, TC = 25
OC
Pd
20
W
MAXIMUM THERMAL RESISTANCE, Junction to Case (Connected as a
BRIDGE)
RθJC
3.0
°C/W
MAXIMUM OPERATING AND STORAGE TEMPERATURE RANGE*
Top, Tstg
-55 to
+200
°C
* Note: SiC semiconductors will handle at or above this operating and storage temperature. However, extended operational use of the packaged device
above 175C may reduce its future performance. All qualification testing and screening per MIL-PRF-19500 will only be performed to 175C.
ELECTRICAL CHARACTERISTICS
SHB601031E
CHARACTERISTIC
TYP
MAX.
UNITS
MAXIMUM FORWARD VOLTAGE (If = 4A PER LEG)
Vf TJ=25 °C
TJ=150 °C
1.55
2.05
1.90
2.45
Volts
MAXIMUM REVERSE CURRENT (600V PIV PER LEG) Ir
TJ = 25 °C
TJ = 150 °C
0.03
0.05
0.20
0.50
mA
JUNCTION CAPACITANCE (Vr =5V) per leg
CJ
220
pF
TOTAL CAPACITANCE CHARGE (VR=600V, IF=4A, di/dt=500A/μs and
TJ=25°C) QC per leg
10
N/A
nC
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