參數(shù)資料
型號(hào)： SH703
廠商： Polyfet RF Devices
英文描述： SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR
中文描述： 硅柵增強(qiáng)型射頻功率VDMOS晶體管
文件頁(yè)數(shù)： 1/2頁(yè)
文件大?。?/td> 37K
代理商： SH703
polyfet rf devices
SH703
10
Push - Pull
AH
96.0
9.0
150.0
0.65 C/W
65
3.6
21.00
3.0
55
0.35
7.50
16.0
270
0.30
70
PARAMETER
SYMBOL
MIN
TYP
MAX
UNITS
TEST CONDITIONS
Common Source Power Gain
Drain Efficiency
Total
Device
Dissipation
Junction to
Case Thermal
Resistance
Maximum
Junction
Temperature
Storage
Temperature
DC Drain
Current
Drain to
Source
Voltage
Gate to
Source
Voltage
-65 C to 150 C
200 C
A
V
Load Mismatch Tolerance
VSWR
Drain to
Gate
Voltage
20:1
Relative
1.20
60.00
Ids =
mA, Vgs = 0V
V, Vgs = 0V
Ciss
Crss
Coss
Vds =
Idq =
A, Vds = V, F =
1.20
Bvdss
Idss
Drain Breakdown Voltage
V
mA
pF
pF
pF
Common Source Output Capacitance
Common Source Feedback Capacitance
Idq =
Idq = 1.20
400
Vgs = 20V, Ids =
Rdson
Saturation Resistance
Forward Transconductance
gM
Vds = 10V, Vgs = 5V
POLYFET RF DEVICES
1110 Avenida Acaso, Camarillo, Ca 93012 Tel:(805) 484-4210 FAX: (805) 484-3393 EMAIL:Sales@polyfet.com URL:www.polyfet.com
400
400
Common Source Input Capacitance
70
V
20
Igss
Vgs
Idsat
Zero Bias Drain Current
Gate Leakage Current
Gate Bias for Drain Current
Saturation Current
1
7
uA
V
Mho
Ohm
Amp
PARAMETER
SYMBOL
MIN
TYP
MAX
UNITS
TEST CONDITIONS
ELECTRICAL CHARACTERISTICS ( EACH SIDE )
RF CHARACTERISTICS ( 130.0
ABSOLUTE MAXIMUM RATINGS ( T =
Gps
A, Vds = V, F =
A, Vds = V, F =
Watts
V
1
MHz
MHz
MHz
Watts
Package Style
130.0
Vds = 0V Vgs = 30V
Vgs = 20V, Vds = 10V
HIGH EFFICIENCY, LINEAR
HIGH GAIN, LOW NOISE
General Description
Silicon VDMOS and LDMOS
transistors designed specifically
for broadband RF applications.
Suitable for Militry Radios,
Cellular and Paging Amplifier Base
Stations, Broadcast FM/AM, MRI,
Laser Driver and others.
28.0
Vds =
A, Vgs = Vds
Ids =
A
η
dB
%
o
o
o
"Polyfet" process features
low feedback and output capacitances
resulting in high F transistors with high
input impedance and high efficiency.
SILICON GATE ENHANCEMENT MODE
RF POWER
TRANSISTOR
VDMOS
Vgs = 0V, F = 1 MHz
28.0
Vds =
Vgs = 0V, F = 1 MHz
28.0
Vds =
Vgs = 0V, F = 1 MHz
28.0
REVISION 07/04/2001
25 C )
WATTS OUTPUT )
相關(guān)PDF資料
PDF描述
SI-40059 SI-40059
SI-40060 SI-40060
SI-40061 SI-40061
SI-40062 SI-40062
SI-40219 SI-40219
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
SH-7030MA 制造商:COOPER 制造商全稱:Cooper Bussmann, Inc. 功能描述:ROTARY CODED SWITCHES SMD
SH-7030MB 制造商:COOPER 制造商全稱:Cooper Bussmann, Inc. 功能描述:ROTARY CODED SWITCHES SMD
SH-7030MC 功能描述:SWITCH ROTARY BCD COMP 10POS DIP RoHS:是 類別:開關(guān) >> DIP 系列:SH-7000 特色產(chǎn)品:RDM Series Rotary DIP Switch 標(biāo)準(zhǔn)包裝:70 系列:RDM 電路:十六進(jìn)制 位置數(shù):16 觸點(diǎn)額定電壓:0.1A @ 42VDC 觸動(dòng)器類型:用于工具旋轉(zhuǎn) 觸動(dòng)器電平:凹槽式 安裝類型:通孔 方向:頂部觸動(dòng) 可清洗:是 其它名稱:EG4977-5RDMAR16PIT
SH-7030TA 功能描述:SWITCH ROTARY BCD COMP 10POS SMD RoHS:是 類別:開關(guān) >> DIP 系列:SH-7000 特色產(chǎn)品:RDM Series Rotary DIP Switch 標(biāo)準(zhǔn)包裝:70 系列:RDM 電路:十六進(jìn)制 位置數(shù):16 觸點(diǎn)額定電壓:0.1A @ 42VDC 觸動(dòng)器類型:用于工具旋轉(zhuǎn) 觸動(dòng)器電平:凹槽式 安裝類型:通孔 方向:頂部觸動(dòng) 可清洗:是 其它名稱:EG4977-5RDMAR16PIT
SH-7030TB 功能描述:SWITCH ROTARY BCD COMP 10POS SMD RoHS:是 類別:開關(guān) >> DIP 系列:SH-7000 特色產(chǎn)品:RDM Series Rotary DIP Switch 標(biāo)準(zhǔn)包裝:70 系列:RDM 電路:十六進(jìn)制 位置數(shù):16 觸點(diǎn)額定電壓:0.1A @ 42VDC 觸動(dòng)器類型:用于工具旋轉(zhuǎn) 觸動(dòng)器電平:凹槽式 安裝類型:通孔 方向:頂部觸動(dòng) 可清洗:是 其它名稱:EG4977-5RDMAR16PIT
發(fā)布緊急采購(gòu)，3分鐘左右您將得到回復(fù)。

采購(gòu)需求

(若只采購(gòu)一條型號(hào)，填寫一行即可)

發(fā)布成功！您可以繼續(xù)發(fā)布采購(gòu)。也可以進(jìn)入我的后臺(tái)，查看報(bào)價(jià)

發(fā)布成功！您可以繼續(xù)發(fā)布采購(gòu)。也可以進(jìn)入我的后臺(tái)，查看報(bào)價(jià)

*型號(hào) *數(shù)量 廠商 批號(hào) 封裝
添加更多采購(gòu)

我的聯(lián)系方式

*
*
*